Product specification 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Collector current IC -1 A Collector current (pulse) ICP -2 A Collector dissipation PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = -20V , IE = 0 Emitter cutoff current IEBO VCB = -4V , IE = 0 DC current Gain hFE Gain bandwidth product Min VCE = -2V , IC = -50mA 100 VCE = -2V , IC = -1A 40 VCE = -10V , IC = -50mA fT Typ Max Unit -0.1 ìA -0.1 ìA 560 180 MHz Collector-emitter saturation voltage VCE(sat) IC = -500mA , IB = -50mA -0.15 -0.7 V Base-emitter saturation voltage VBE(sat) IC = -500mA , IB = -50mA -0.85 -1.2 V Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -25 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -25 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -5 V Output capacitance Cob VCB = -10V , f = 1MHz 52 pF hFE Classification BB Marking Rank R S T U hFE 100 200 140 280 200 400 280 560 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1