Transistors SMD Type Product specification 2SD1619 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Collector current (pulse) ICP 2 A PC 500 mW PC * 1.3 W Collector dissipation Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Mounted on ceramic board(250mm2X0.8mm) Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 20 V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 4 V, IC=0 0.1 ìA DC current gain hFE VCE = 2 V , IC = 50 mA fT VCE = 10 V , IC = 50 mA Cob VCB = 10 V , f = 1.0MHz Gain bandwidth product Output capacitance Testconditons Min Typ 100 560 180 MHz 15 pF Collector-emitter saturation voltage VCE(sat) IC = 500 mA , IB = 50 mA 0.1 0.3 V Base-emitter saturation voltage VBE(sat) IC = 500 mA , IB = 50 mA 0.85 1.2 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 25 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 25 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V hFE Classification DB Marking Rank R S T U hFE 100 200 140 280 200 400 280 560 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1