TYSEMI 2SC5063

Transistors
SMD Type
Product specification
2SC5063
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
High-speed switching
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
Wide area of safe operation (ASO)
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High collector to base voltage VCBO
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VCBO
500
V
VCES
500
V
Collector to base voltage
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
3
A
Collector current
IC
1.5
A
Base current
IB
0.5
A
Collector power dissipation
TC=25
25
PC
W
1.3
Ta=25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
ICBO
VCB = 500V, IE = 0
100
ìA
Emitter cutoff current
IEBO
VEB = 5V, IC = 0
100
ìA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
400
VCE = 5V, IC = 0.1A
15
VCE = 5V, IC = 0.8A
8
Forward current transfer ratio
Symbol
hFE
Testconditons
Collector to emitter saturation voltage
VCE(sat)
IC = 0.8A, IB = 0.16A
Base to emitter saturation voltage
VBE(sat)
IC = 0.8A, IB = 0.16A
Min
1.5
fT
VCE = 10V, IC = 0.2A, f = 10MHz
Turn-on time
ton
IC = 0.8A, IB1 = 0.16A, IB2 = -0.32A,
Storage time
tstg
VCC = 150V
http://www.twtysemi.com
V
1
Transition frequency
Fall time
Typ
25
[email protected]
V
MHz
0.7
2
tf
V
ìs
0.3
4008-318-123
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