Transistors IC SMD Type Product specification 2SD1251,2SD1251A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Wide area of safe operation. +0.15 4.60-0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol 2SD1251 VCBO 2SD1251A Collector-emitter voltage 2SD1251 VCEO 2SD1251A Rating Unit 60 V 80 V 60 V 80 V VEBO 8 V Collector current IC 4 A Peak collector current ICP 6 A Base current IB 1 A 1.3 W 30 W Emitter-base voltage Collector power dissipation Ta = 25 PC Tc = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification 2SD1251,2SD1251A Electrical Characteristics Ta = 25 Parameter Symbol Collector-base cutoff current Emitter-base cutoff current Collector to emitter voltage 2SD1251 Testconditons ICBO VCB = 20 V, IE = 0 IEBO VEB = 8 V, IC = 0 Min VCEO(sus) IC = 0.25 A, L = 25 mH hFE VCE = 3 V, IC = 1 A 30 VCE = 3 V, IC = 0.1 A 40 ìA 1 mA 1.2 VCE(sat) IC = 2 A, IB = 0.4 A Collector-emitter saturation voltage 30 160 VCE = 3 V, IC = 1 A VBE Transition frequency Unit 80 Forward current transfer ratio Base-emitter voltage Max 60 2SD1251A Forward current transfer ratio Typ fT 1 VCE = 10 V, IC = 0.2 A, f = 0.5 MHz 1 V V MHz hFE Classification Rank Q P O hFE 30 60 50 100 80 160 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2