Product specification 2SC5457 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 High collector to base voltage VCBO +0.15 0.50 -0.15 +0.2 9.70 -0.2 High-speed switching 3 .8 0 Features 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Symbol Rating Unit VCBO 500 V VCES 500 V VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 6 A Collector current IC 3 A Base current IB 1.2 A Collector to emitter voltage Collector power dissipation TC = 25 30 PC W 1 Ta = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 500V, IE = 0 100 ìA Emitter cutoff current IEBO VEB = 5V, IC = 0 100 ìA Collector to emitter voltage VCEO Forward current transfer ratio hFE IC = 10mA, IB = 0 400 V VCE = 5V, IC = 0.1A 10 V VCE = 2V, IC = 1.2A 8 Collector to emitter saturation voltage VCE(sat) IC = 1.5A, IB = 0.3A Base to emitter saturation voltage VBE(sat) IC = 1.5A, IB = 0.3A 40 1 1.5 Transition frequency fT VCE = 10V, IC = 0.2A, f = 1MHz Turn-on time ton IC = 1.5A, IB1 = 0.15A, IB2 =-0.3A, 1.0 Storage time tstg VCC = 200V 3.0 Fall time http://www.twtysemi.com 10 tf [email protected] V MHz ìs 0.3 4008-318-123 1 of 1