TYSEMI 2SC5457

Product specification
2SC5457
TO-252
6.50
+0.2
5.30-0.2
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio hFE
+0.1
0.60-0.1
2.3
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
High collector to base voltage VCBO
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High-speed switching
3 .8 0
Features
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Symbol
Rating
Unit
VCBO
500
V
VCES
500
V
VCEO
400
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
6
A
Collector current
IC
3
A
Base current
IB
1.2
A
Collector to emitter voltage
Collector power dissipation TC = 25
30
PC
W
1
Ta = 25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 500V, IE = 0
100
ìA
Emitter cutoff current
IEBO
VEB = 5V, IC = 0
100
ìA
Collector to emitter voltage
VCEO
Forward current transfer ratio
hFE
IC = 10mA, IB = 0
400
V
VCE = 5V, IC = 0.1A
10
V
VCE = 2V, IC = 1.2A
8
Collector to emitter saturation voltage
VCE(sat)
IC = 1.5A, IB = 0.3A
Base to emitter saturation voltage
VBE(sat)
IC = 1.5A, IB = 0.3A
40
1
1.5
Transition frequency
fT
VCE = 10V, IC = 0.2A, f = 1MHz
Turn-on time
ton
IC = 1.5A, IB1 = 0.15A, IB2 =-0.3A,
1.0
Storage time
tstg
VCC = 200V
3.0
Fall time
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10
tf
[email protected]
V
MHz
ìs
0.3
4008-318-123
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