TYSEMI CZT2000

Product specification
CZT2000
SOT-223
Unit: mm
0.1max
+0.05
0.90-0.05
Features
+0.1
3.00-0.1
+0.15
1.65-0.15
+0.2
3.50-0.2
6.50
+0.2
-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1 Base
1
2 Collector
3
2
+0.1
0.70-0.1
2.9
4.6
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
200
V
Collector-Emitter Voltage
VCEO
200
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
600
mA
Power Dissipation
PD
2
W
TJ,Tstg
-65 to 150
ÈJA
62.5
Operating and Storage Junction Temperature
Thermal Resistance
/W
Electrical Characteristics Ta = 25
Symbol
Max
Unit
ICBO
VCB=180V
Testconditons
Min
500
nA
IEBO
VBE=10V
100
nA
BVCES
IC=1.0mA
200
V
VCE(SAT)
IC=20mA, IB=25ìA
0.9
V
VCE(SAT)
IC=80mA, IB=40ìA
1.1
V
VCE(SAT)
IC=160mA, IB=100ìA
1.2
V
2.0
V
VBE(ON)
hFE
VCE=5.0V, IC=160mA
VCE=5.0V, IC=100ìA
3,000
VCE=5.0V, IC=10mA
3,000
VCE=5.0V, IC=160mA
3,000
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