SMD Type Product specification KXT5551 (CXT5551) SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 High current (max. 500mA). +0.1 4.00-0.1 Features Low voltage (max. 150 V). +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 1. Base 0.40 +0.1 -0.1 +0.1 3.00-0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Collector current (DC) IC 600 mA power dissipation PD 1.2 W thermal resistance Junction-to-ambient R 104 JA Junction temperature Tj 150 Storage temperature Tstg -65 to +150 /W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector to base breakdown voltage VCBO IC=100 Collector to emitter breakdown voltage VCEO Emitter to base breakdown voltage VEBO Collector cutoff current ICBO Min Collector to emitter saturation voltage Base to emitter saturation voltage hFE VCE(sat) VBE(sat) Output capacitance Cob Transition frequency fT http://www.twtysemi.com Max Unit V IC=1.0mA 160 V IE=10 6.0 A V VCB = 120 V, IE = 0 50 nA VCB = 120 V, TA=100 50 A IC = 1.0 mA; VCE = 5.0 V DC current gain Typ 180 A 80 IC = 10mA; VCE = 5.0V 80 IC = 50 mA; VCE = 5.0V 30 250 IC = 10 mA; IB = 1.0mA 0.15 V IC = 50 mA; IB = 5.0mA 0.20 V IC = 10 mA; IB = 1.0mA 1.00 V IC = 50 mA; IB = 5.0mA 1.00 V VCB = 10 V, IE = 0,f=1.0MHz IC = 10 mA; VCE =10V; f = 100 MHz [email protected] 100 4008-318-123 6.0 pF 300 MHz 1 of 1