Transistors SMD Type PNP Silicon Extremely High Voltage Darlington Transistor CZT2000 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 10 V Collector Current IC 600 mA Power Dissipation PD 2 W TJ,Tstg -65 to 150 ÈJA 62.5 Operating and Storage Junction Temperature Thermal Resistance /W Electrical Characteristics Ta = 25 Symbol Max Unit ICBO VCB=180V Testconditons Min 500 nA IEBO VBE=10V 100 nA BVCES IC=1.0mA 200 V VCE(SAT) IC=20mA, IB=25ìA 0.9 V VCE(SAT) IC=80mA, IB=40ìA 1.1 V VCE(SAT) IC=160mA, IB=100ìA 1.2 V VBE(ON) VCE=5.0V, IC=160mA 2.0 V hFE VCE=5.0V, IC=100ìA 3,000 VCE=5.0V, IC=10mA 3,000 VCE=5.0V, IC=160mA 3,000 www.kexin.com.cn 1