Transistors SMD Type Product specification FCX658A Features 400 Volt VCEO 0.5 Amp continuous current Ptot=1 Watt Optimised hfe characterised upto 200mA Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Continuous Collector Current IC 500 mA Power Dissipation at Tamb=25 Ptot Operating and Storage Temperature Range http://www.twtysemi.com 1 5.7 derate above 25 Tj:Tstg [email protected] W mW/ -55 to +150 4008-318-123 1 of 2 Transistors SMD Type Product specification FCX658A Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC=100ìA 400 480 Collector-Emitter Breakdown Voltage V(BR)CEO) IC=10mA* 400 465 V Emitter-Base Breakdown Voltage V(BR)EBO IE=100ìA 5 7.8 V ICBO VCB=320V Collector Cut-Off Current ICES VCE=320V 100 nA Emitter Cut-Off Current IEBO VEB=4V 100 nA Collector Cut-Off Current Collector-Emitter Saturation Voltage VCE(sat) 100 IC=20mA, IB=1mA 0.165 IC=50mA, IB=5mA* 0.125 IC=100mA, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) IC=100mA,IB=10mA* Base-Emitter Turn On Voltage VBE(on) IC=100mA, VCE=5V* Static Forward Current Transfer Ratio hFE Transition Frequency fT Output Capacitance Cobo Switching times V nA V 0.2 0.75 0.85 V 0.70 0.85 V IC=1mA, VCE=5V* 85 150 IC=10mA, VCE=10V* 100 170 IC=100mA, VCE=5V* 55 130 IC=200mA, VCE=10V* 35 90 IC=20mA, VCE=20V,f=20MHz 50 MHz VCB=20V, f=1MHz 10 pF ton IC=100mA, VC=100V 130 ns toff IB1=10mA,IB2=-20mA 3300 ns * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2% Marking Marking 65A http://www.twtysemi.com [email protected] 4008-318-123 2of 2