TYSEMI FCX658A

Transistors
SMD Type
Product specification
FCX658A
Features
400 Volt VCEO
0.5 Amp continuous current
Ptot=1 Watt
Optimised hfe characterised upto 200mA
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-Base Voltage
Parameter
VCBO
400
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb=25
Ptot
Operating and Storage Temperature Range
http://www.twtysemi.com
1
5.7
derate above 25
Tj:Tstg
[email protected]
W
mW/
-55 to +150
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
FCX658A
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC=100ìA
400
480
Collector-Emitter Breakdown Voltage
V(BR)CEO)
IC=10mA*
400
465
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=100ìA
5
7.8
V
ICBO
VCB=320V
Collector Cut-Off Current
ICES
VCE=320V
100
nA
Emitter Cut-Off Current
IEBO
VEB=4V
100
nA
Collector Cut-Off Current
Collector-Emitter Saturation Voltage
VCE(sat)
100
IC=20mA, IB=1mA
0.165
IC=50mA, IB=5mA*
0.125
IC=100mA, IB=10mA*
Base-Emitter Saturation Voltage
VBE(sat)
IC=100mA,IB=10mA*
Base-Emitter Turn On Voltage
VBE(on)
IC=100mA, VCE=5V*
Static Forward Current Transfer Ratio
hFE
Transition Frequency
fT
Output Capacitance
Cobo
Switching times
V
nA
V
0.2
0.75
0.85
V
0.70
0.85
V
IC=1mA, VCE=5V*
85
150
IC=10mA, VCE=10V*
100
170
IC=100mA, VCE=5V*
55
130
IC=200mA, VCE=10V*
35
90
IC=20mA, VCE=20V,f=20MHz
50
MHz
VCB=20V, f=1MHz
10
pF
ton
IC=100mA, VC=100V
130
ns
toff
IB1=10mA,IB2=-20mA
3300
ns
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle
2%
Marking
Marking
65A
http://www.twtysemi.com
[email protected]
4008-318-123
2of 2