Transistors SMD Type NPN Silicon Planar High Performance Transistor FZT653 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 Low saturation voltage +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V ICM 6 A Continuous Collector Current IC 2 A Power Dissipation at Tamb=25 Ptot 2 W Tj:Tstg -55 to +150 Peak Pulse Current Operating and Storage Temperature Range www.kexin.com.cn 1 Transistors SMD Type FZT653 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ. Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC=100ìA 120 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA* 100 V Emitter-Base Breakdown Voltage V(BR)EBO IE=100ìA 5 Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICBO IEBO VCE(sat) V VCB=100V 0.1 ìA VCB=100V,Tamb=100 10 ìA VEB=4V 0.1 ìA IC=1A, IB=100mA* 0.13 0.3 V IC=2A, IB=200mA* 0.23 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=100mA* 0.9 1.25 V Base-Emitter Turn-On Voltage VBE(on) IC=1A, VCE =2V* 0.8 1.0 V Static Forward Current Transfer Ratio hFE Transition Frequency fT Output Capacitance Cobo Switching Times IC=50mA, VCE =2V* 70 200 IC=500mA, VCE =2V* 100 200 IC=1A, VCE =2V* 55 110 IC=2A, VCE =2V* 25 55 IC=100mA, VCE =5V,f=100MHz 140 175 VCB=10V, f=1MHz ton IC=500mA, VCC =10V toff IB1=IB2=50mA * Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2% Marking Marking 2 Min FZT653 www.kexin.com.cn 300 MHz 30 pF 80 ns 1200 ns