Transistors SMD Type NPN Silicon Planar High Voltage Transistor FZT658 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features 400 Volt VCEO +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Low saturation voltage 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V ICM 1 A Continuous Collector Current IC 0.5 A Power Dissipation at Tamb=25 Ptot 2 W Tj:Tstg -55 to +150 Peak Pulse Current Operating and Storage Temperature Range www.kexin.com.cn 1 Transistors SMD Type FZT658 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ. Max Unit Breakdown Voltage V(BR)CBO IC=100ìA 400 V Breakdown Voltage V(BR)CEO IC=10mA* 400 V Breakdown Voltage 5 V(BR)EBO IE=100ìA Collector Cut-Off Current ICBO VCB=320V 100 nA Emitter Cut-Off Current IEBO VEB=4V 100 nA Collector-Emitter Saturation Voltage VCE(sat) V IC=20mA, IB=1mA* 0.3 V IC=50mA, IB=5mA* 0.25 V IC=100mA, IB=10mA 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA* 0.9 V Base-Emitter Turn-On Voltage VBE(on) IC=100mA, VCE=5V* 1.0 V Static Forward Current Transfer Ratio hFE Transition Frequency fT Output Capacitance Cobo Switching Times IC=1mA, VCE=5V* 50 IC=100mA, VCE=5V* 50 IC=200mA, VCE=10V* 40 IC=10mA, VCE=20V,f=20MHz 50 Marking Marking FZT658 www.kexin.com.cn MHz VCB=20V, f=1MHz 10 pF ton IC=100mA, VCC=100V 130 ns toff IB1=10mA, IB2=-20mA 3300 ns * Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2% 2 Min