TYSEMI FMMT617TA

Transistors
IC
Transistor
SMD Type
Product specification
FMMT617TA
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
● Power Dissipation: Ptot=625mW
1
0.55
■ Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
+0.1
0.97-0.1
● Collector Current: IC=3A
0-0.1
+0.1
0.38-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Symbol
Rating
Unit
Collector-Base Voltage
Parameter
VCBO
15
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
5
V
IC
3
A
Continuous Collector Current
Peak Pulse Current *1
ICM
12
A
Power Dissipation at Tamb =25℃*2
Ptot
625
mW
Tj:Tstg
-55 to +150
℃
Operating and Storage Temperature Range
*1. Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2%
*2.Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
Transistors
Transistor
SMD Type
Type
SMD
Product specification
FMMT617TA
■ Electrical Characteristics Ta = 25℃
Parameter
Test conditions
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC=100μA
15
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA*
15
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=100μA
5
V
Collector Cut-Off Current
ICBO
VCB=10V
Emitter Cut-Off Current
IEBO
VEB=4V
100
nA
Collector Emitter Cut-Off Current
ICES
VCES=10V
100
nA
100
IC=0.1A, IB=10mA*
Collector-Emitter Saturation Voltage
VCE(sat)
nA
8
14
mV
IC=1A, IB=10mA*
70
100
mV
IC=3A, IB=50mA*
150
200
mV
Base-Emitter Saturation Voltage
VBE(sat)
IC=3A, IB=50mA*
0.9
1.0
V
Base-Emitter Turn-On Voltage
VBE(om)
IC=3A, VCE=2V*
0.84
1.0
V
Static Forward Current Transfer Ratio
hFE
IC=10mA, VCE=2V*
200
415
IC=200mA, VCE=2V*
300
450
IC=3A, VCE=2V*
200
320
IC=5A, VCE=2V*
150
240
80
120
IC=12A, VCE =2V*
Transition Frequency
fT
Output Capacitance
Cobo
IC=50mA, VCE=10V,f=50MHz
80
VCB=10V, f=1MHz
30
MHZ
40
pF
Turn-On Time
t(on)
VCC=10V, IC=3A
120
ns
Turn-Off Time
t(off)
IB1=IB2=50mA
160
ns
*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2%
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2