Product specification HSMP-3820 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ■ Features 0.4 3 ● Ultra-Low Distortion Switching 1 0.55 ● Low Distortion Attenuating +0.1 1.3-0.1 +0.1 2.4-0.1 ● Low Current Switching 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 1 2 +0.1 0.38-0.1 +0.1 0.97-0.1 3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit VR 50 V Continuous reverse voltage Forward current (1 ms Pulse) Power Dissipation @ TA = 25℃ Junction Temperature Storage Temperature Range IF 1 A Ptot 250 mW TJ 150 ℃ Tstg -65 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Reverse voltage VR IR = 10 μA Series Resistance RS IF =10mA,f=100MHz 0.6 Ω Total Capacitance CT VR =20V,f=1MHz 0.8 pF 50 V ■ Marking Marking F0 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification HSMP-3820 ■ Typical Characteristics 1.4 1.2 1000 CAPACITANCE (pF) RESISTANCE (OHMS) 10000 100 10 1 0.8 0.6 0.4 1 0.2 0.1 0.01 0.1 1 10 100 IF – FORWARD BIAS CURRENT (mA) Figure 1. Resistance at 25°C vs. Forward Bias Current. 0 100 95 90 30 IF – FORWARD BIAS CURRENT (mA) Figure 3. 2nd Harmonic Input Intercept Point vs. Forward Bias Current for Switch Diodes. Trr – REVERSE RECOVERY TIME (ns) INPUT INTERCEPT POINT (dBm) 105 85 30 40 50 100 VR = 2V VR = 5V 10 VR = 10V 1 10 20 30 FORWARD CURRENT (mA) Figure 4. Reverse Recovery Time vs. Forward Current for Various Reverse Voltages. 100 IF – FORWARD CURRENT (mA) 20 Figure 2. Capacitance vs Reverse Voltage. Diode Mounted as a Series Attenuator in a 115 50 Ohm Microstrip and Tested at 123 MHz 110 10 10 VR – REVERSE VOLTAGE (V) 120 1 0 10 1 0.1 125°C 25°C –50°C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 VF – FORWARD VOLTAGE (mA) Figure 15. Forward Current vs Forward Voltage. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2