Product specification BAL99W Features Very small plastic SMD envelope High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA. Absolute Maximum Ratings Ta = 25 Parameter Max Unit VRRM 85 V continuous reverse voltage VR 75 V continuous forward current IF 150 mA 500 mA repetitive peak reverse voltage repetitive peak forward current Symbol Conditions IFRM square wave; Tj = 25 non-repetitive peak forward current IFSM total power dissipation Ptot Storage temperature range Tstg Junction temperature Min prior to surge; s 4 t = 1 ms 1 t=1 t=1s 0.5 Ta mb = 25 200 Tj -65 A mW +150 150 thermal resistance from junction to tie-point Rth j-t p 300 K/W thermal resistance from junction to ambient Rth j-a 625 K/W http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification BAL99W Electrical Characteristics Ta = 25 Param eter Forward voltage Sym bol Test Conditions Max IF = 1 m A 715 I F = 10 m A 855 I F = 50 m A 1 I F = 150 m A 1.25 V R = 25 V 30 nA V R = 75 V 1 A V R = 25 V, T j = 150 30 A V R = 25 V, T j = 150 50 A 1.5 pF 4 ns 1.75 V VF Reverse current IR Diode capacitance Cd Reverse recovery tim e t rr f = 1.0 MHz, V R = 0 when switched from I F = 10 m A to I R = 10 m A; R L = 100 Forward recovery voltage Vf r Unit mV V ; m easured at I R = 1 m A when switched from I F = 10 m A; t r = 20 ns Marking Marking JF http://www.twtysemi.com [email protected] 4008-318-123 2 of 2