Product specification HSMP-3830 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ■ Features 1 0.55 ● Ultra-Low Distortion Switching +0.1 1.3-0.1 +0.1 2.4-0.1 ● Low Distortion Attenuating 0.4 3 ● Low Current Switching 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 1 2 +0.1 0.38-0.1 +0.1 0.97-0.1 3 ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Continuous reverse voltage Parameter VR 200 V Forward current (1 ms Pulse) IF 1 A Power Dissipation @ TA = 25℃ Ptot 250 mW Junction Temperature TJ 150 ℃ Tstg -65 to +150 ℃ Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons IR = 10 mA Min Typ Max 200 Unit Reverse voltage VR V Series Resistance RS IF =100mA,f=100MHz 1.5 Ω Total Capacitance CT VR =50V,f=1MHz 0.3 pF ■ Marking Marking K0 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification HSMP-3830 ■ Typical Characteristics 10000 0.30 RESISTANCE (OHMS) TOTAL CAPACITANCE (pF) 0.35 1 MHz 0.25 100 MHz 0.20 0.15 1 GHz 0 2 4 6 8 1000 REVERSE VOLTAGE (V) 1 Figure 2. Resistance at 25°C vs. Forward Bias Current. 1.4 INPUT INTERCEPT POINT (dBm) 120 1.2 CAPACITANCE (pF) 10 0.1 0.01 0.1 1 10 100 IF – FORWARD BIAS CURRENT (mA) 10 12 14 16 18 20 Figure 1. RF Capacitance vs. Reverse Bias 1 0.8 0.6 0.4 0.2 0 100 0 10 20 30 40 50 VR – REVERSE VOLTAGE (V) Figure 3. Capacitance vs. Reverse Voltage. http://www.twtysemi.com [email protected] Diode Mounted as a 110 Series Attenuator in a 50 Ohm Microstrip 100 and Tested at 123 MHz 90 80 70 60 50 40 1000 100 10 DIODE RF RESISTANCE (OHMS) Figure 4. 2nd Harmonic Input Intercept Point vs. Diode RF Resistance for Attenuator Diodes. 4008-318-123 2 of 3 Product specification HSMP-3830 Diode Mounted as a Series Attenuator in a 115 50 Ohm Microstrip and Tested at 123 MHz 110 Trr - REVERSE RECOVERY TIME (nS) INPUT INTERCEPT POINT (dBm) 120 105 100 95 90 85 1 10 30 IF – FORWARD BIAS CURRENT (mA) Figure 5. 2nd Harmonic Input Intercept Point vs. Forward Bias Current for Switch Diodes. 1000 VR = 5V VR = 10V 100 VR = 20V 10 10 20 30 FORWARD CURRENT (mA) Figure 6. Reverse Recovery Time vs. Forward Current for Various Reverse Voltage. IF – FORWARD CURRENT (mA) 100 10 1 0.1 125°C 25°C –50°C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 V F– FORWARD VOLTAGE (mA) Figure 7. Forward Current vs. Forward Voltage. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3