TYSEMI KI4390DY

IC
IC
MOSFET
SMD Type
Product specification
KI4390DY
Features
Extremely Low Qgd WFET Technology for
Switching Losses
TrenchFETTM Power MOSFET
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150
) TA = 25
ID
Maximum Power Dissipation *
30
TA = 25
IS
PD
TA = 70
Operating Junction and Storage Temperature Range
TJ, Tstg
Unit
V
20
12.5
8.5
6.8
20
IDM
Continuous Source Current ( Diode Conduction)*
Steady State
10
TA = 70
Pulsed Drain Current
10 secs
2.7
1.3
3
1.4
1.9
0.9
A
W
-55 to 150
*Surface Mounted on 1" X 1" FR4 Board.
http://www.twtysemi.com
[email protected]
4008-318-123
1of 2
IC
IC
MOSFET
SMD Type
Product specification
KI4390DY
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient *
Symbol
t
10 sec
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
Steady-State
RthJF
Typical
Maximum
32
42
68
90
15
20
Unit
/W
* Surface Mounted on 1" X 1" FR4 Board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current*
ID(on)
Drain Source On State Resistance*
rDS(on)
Testconditons
VDS = VGS, ID = 250
VDS = 0 V, VGS =
Min
Typ
0.8
A
20 V
Max
Unit
2.8
V
100
VDS = 24 V, VGS = 0 V
1
VDS = 24 V, VGS = 0 V, TJ = 55
5
nA
A
VDS
30
5 V, VGS = 10 V
A
VGS = 10 V, ID = 12.5 A
0.0075 0.0095
VGS = 4.5 V, ID = 10.5 A
0.0105 0.0135
Forward Transconductanceb
gfs
VDS = 15 V, ID = 12.5 A
38
S
Schottky Diode Forward Voltage*
VSD
IS = 2.7 A, VGS = 0 V
0.7
V
VDS = 15 V, VGS = 4.5 V, ID = 12.5 A
3.5
10
15
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.1
Rg
0.8
td(on)
16
30
6
12
43
70
14
25
35
60
Gate Resistance
Turn-On Delay Time
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test :Pulse width
VDD=15V,RL=15
,ID=1A,VGEN=10V,RG=6
IF = 2.7 A, di/dt = 100 A/
s
nC
ns
ns
300 s,duty cycle 2%
http://www.twtysemi.com
[email protected]
4008-318-123
2of 2