SMD Type MOSFET MOSFET Product specification KI1539DL SOT-363 Unit: mm 0.36 +0.15 2.3-0.15 PIN Configuration +0.1 1.25-0.1 0.525 +0.1 1.3-0.1 0.65 +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 5 secs Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 85 Pulsed Drain Current Steady State Continuous Source Current (Diode Conduction)a IS TA = 25 PD TA = 85 Operating Junction and Storage Temperature Range 5 secs 30 Unit Steady State -30 V 20 V 0.63 0.54 -0.45 -0.42 A 0.45 0.43 -0.32 -0.31 A 1 IDM Maximum Power Dissipation* P-Channel A 0.25 0.23 -0.25 -0.23 A 0.3 0.27 0.3 0.27 W 0.16 0.14 0.16 0.14 W -55 to 150 TJ, Tstg *Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings TA = 25 Parameter Maximum Junction-to-Ambient* Symbol t 5 sec RthJA Steady State Maximum Junction-to-Foot (Drain) Steady State RthJF Typical Maximum 360 415 400 460 300 350 Unit /W *Surface Mounted on 1" X 1" FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC MOSFET MOSFET SMD Type Product specification KI1539DL Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS( th) IGSS Gate Body Leakage Testconditons VDS = VGS, ID = 250 A N-Ch 1.0 VDS = VGS, ID = -250 P-Ch -1.0 A VDS = 0 V VGS = 20V On State Drain Currenta IDSS ID(on) rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn On Time td(on) Rise Time tr Turn Off Delay Time td( off) Fall Time tf Source-Drain Reverse Recovery Time * Pulse test; pulse width trr Max N-Ch 100 100 1 VDS = -24 V, VGS = 0 V P-Ch -1 VDS = 24 V, VGS = 0 V, TJ = 85 N-Ch 5 VDS = -24 V, VGS = 0 V, TJ = 85 P-Ch -5 VDS 5 V, VGS = 10 V N-Ch 1.0 VDS -5 V, VGS = -10 V P-Ch -1.0 N-Ch 0.410 0.480 VGS = -10 V, ID = -0.42A P-Ch 0.800 0.940 N-Ch 0.600 0.700 VGS = -4.5 V, ID = -0.2A P-Ch 1.5 VDS = 15 V, ID = 0.59A N-Ch 0.75 VDS = -15 V, ID = - 0.42A P-Ch 0.5 IS = 0.23A, VGS = 0 V N-Ch 0.8 1.2 IS = -0.23A, VGS = 0 V P-Ch -0.86 -1.2 N-Channel N-Ch 0.86 1.4 VDS = 15 V, VGS = 10 V, ID = 0.59A P-Ch 0.9 1.4 mS N-Ch 0.24 P-Ch 0.21 VDS = -15 V, VGS = -10 V, ID = 0.42A N-Ch 0.08 P-Ch 0.17 N Channel N-Ch 5 10 VDD = 15 V, RL = 30 P-Ch 4 10 ID= 0.5 A, VGEN = 10V, Rg = 6 N-Ch 8 15 P-Ch 8 15 P-Channel N-Ch 8 15 VDD = -15 V, RL = 30 P-Ch 5 10 ID= -0.5 A, VGEN = -10 V, Rg = 6 N-Ch 7 15 P-Ch 7 15 N-Ch 15 30 P-Ch 20 40 IF = -0.23 A, di/dt = 100 A/ s A 1.700 P-Channel s nA A VGS = 4.5 V, ID = 0.2A IF = 0.23 A, di/dt = 100 A/ Unit V P-Ch VGS = 10 V, ID = 0.59A Drain Source On State Resistance* Typ N-Ch VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current Min V pC ns 300 s, duty cycle 2%. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2