MOSFET IC IC Transistors MOSFE SMD Type Product specification KI5902DC Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 ) TA = 25 ID TA = 85 5secs V 20 3.9 2.9 IS TA = 25 PD TA = 85 Operating Junction and Storage Temperature Range 2.1 A 10 IDM Continuous Source Current (Diode Conduction)* Unit 30 2.8 Pulsed Drain Current Maximum Power Dissipation * Steady State 4.8 0.9 2.1 1.1 1.1 0.6 W -55 to 150 TJ, Tstg 260 Soldering Recommendations *Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient * Symbol t 5 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) Steady-State RthJF Typical Maximum 50 60 90 110 30 40 Unit /W * Surface Mounted on 1" X 1" FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 MOSFET IC IC Transistors MOSFE SMD Type Product specification KI5902DC Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current* ID(on) Drain Source On State Resistance* rDS(on) Testconditons VDS = VGS, ID = 250 VDS = 0 V, VGS = Min Typ Max 1.0 A V 20 V 100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 85 5 VDS 10 5 V, VGS = 10 V A VGS = 10 V, ID = 2.9 A 0.072 0.085 0.143 VGS = 4.5 V, ID = 2.2A 0.120 gfs VDS = 15 V, ID = 2.9 A 20 Schottky Diode Forward Voltage* VSD IS = 0.9 A, VGS = 0 V 0.8 1.2 5 7.5 VDS = 15 V, VGS = 10 V, ID = 2.9 A 0.8 S Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 7 11 tr 12 18 12 18 7 11 40 80 Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test :Pulse width nA A Forward Transconductanceb Rise Time Unit V nC 1.0 VDD=15V,RL=15 ,ID=1A,VGEN=10V,RG=6 IF = 0.9 A, di/dt = 100 A/ s ns ns 300 s,duty cycle 2% http://www.twtysemi.com [email protected] 4008-318-123 2 of 2