Transistors IC SMD Type Product specification KI1557DH SOT-363 Unit: mm +0.1 1.3-0.1 0.65 TrenchFET Power MOSFETs +0.15 2.3-0.15 Fast Switching to Minimize Gate and +0.1 1.25-0.1 0.525 Features 0.36 Switching Losses +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 5 secs Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 Maximum Power Dissipation* TA = 25 0.9 V V 1.2 -0.86 0.8 -0.62 3 IS PD Unit Steady State -12 1.3 ID TA = 85 Operating Junction and Storage Temperature Range 5 secs 8 IDM Continuous Source Current (Diode Conduction)* Steady State 12 TA = 85 Pulsed Drain Current P-Channel -0.77 -0.55 -2 A A A 0.5 0.39 -0.5 -0.39 A 0.6 0.47 0.6 0.47 W 0.3 0.25 0.3 0.25 W -55 to 150 TJ, Tstg *Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings TA = 25 Parameter Maximum Junction-to-Ambient* Symbol t 5 sec RthJA Steady State Maximum Junction-to-Foot (Drain) Steady State RthJF Typical Maximum 170 210 220 265 105 125 Unit /W *Surface Mounted on 1" X 1" FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KI1557DH Electrical Characteristics TJ = 25 Parameter Symbol Gate Threshold Voltage VGS( th) Gate Body Leakage IGSS Testconditons IDSS ID(on) On State Drain Current* rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn On Time td(on) tr Rise Time td( off) Turn Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width Max VDS = VGS, ID = 100 A N-Ch 0.45 1 P-Ch -0.45 1 A VDS = 0 V VGS = 8V N-Ch 100 P-Ch 100 N-Ch 1 VDS = -9.6V, VGS = 0 V P-Ch -1 VDS = 9.6 V, VGS = 0 V, TJ = 85 N-Ch 5 VDS = -9.6V, VGS = 0 V, TJ = 85 P-Ch -5 VDS 5 V, VGS = 4.5 V N-Ch 3 VDS -5 V, VGS = -4.5 V P-Ch 2 VGS = 4.5 V, ID = 1.2A Drain Source On State Resistance* Typ VDS = VGS, ID = -100 VDS = 9.6V, VGS = 0 V Zero Gate Voltage Drain Current Min N-Ch P-Ch 0.445 0.535 N-Ch 0.230 0.280 VGS = -2.5 V, ID = -0.6A P-Ch 0.735 0.880 VGS = 1.8 V, ID = 0.2A N-Ch 0.284 0.340 VGS = -1.8 V, ID = -0.20A P-Ch 1.05 VDS = 5 V, ID = 1.2A N-Ch 0.8 VDS = -5 V, ID = -0.77A P-Ch 1.2 IS = 0.39A, VGS = 0 V N-Ch 0.8 1.2 IS = -0.93A, VGS = 0 V P-Ch -0.8 -1.2 N-Channel N-Ch 0.8 1.2 VDS = 6 V, VGS = 4.5V, ID = 1.2A P-Ch 1.1 1.8 N-Ch 0.15 P-Channel P-Ch 0.3 VDS = -6 V, VGS = -4.5 V, ID = -0.1A N-Ch 0.20 P-Ch 0.25 mS V pC N-Ch 15 25 VDD = 6 V, RL = 12 P-Ch 17 25 ID= 0.5 A, VGEN = 4.5V, Rg = 6 N-Ch 25 40 P-Ch 30 45 P-Channel N-Ch 25 40 VDD = -6 V, RL = 12 P-Ch 15 25 ID= -0.5 A, VGEN = -4.5 V, Rg = 6 N-Ch 10 15 P-Ch 10 15 s A 1.26 N Channel s nA 0.195 0.235 VGS = 2.5 V, ID = 1.0A IF = -0.39 A, di/dt = 100 A/ V A VGS = -4.5 V, ID = -0.77A IF = 0.39 A, di/dt = 100 A/ Unit N-Ch 20 40 P-Ch 25 40 ns 300 s, duty cycle 2%. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2