Transistors IC MOSFE SMD Type Product specification KI5903DC Features Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 85 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * PD TA = 85 Operating Junction and Storage Temperature Range -1.8 -0.9 2.1 1.1 1.1 0.6 W -55 to 150 TJ, Tstg Symbol 5 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) A 260 Parameter Maximum Junction-to-Ambienta 1.5 10 Soldering Recommendations (Peak Temperature) t 2.1 2.1 IS TA = 25 V 2.9 IDM Unit Steady-State RthJF Typ Max 50 60 90 110 30 40 Unit /W * Surface Mounted on 1" X 1' FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC Transistors IC MOSFE SMD Type Product specification KI5903DC Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current* ID(on) Drain-Source On-State Resistance* rDS(on) Testconditons Min 100 -1 -5 VDS = -16V, VGS = 0 V, TJ = 85 -10 - 5 V, VGS = -4.5 V Unit V 12 V VDS = -16V, VGS = 0 V VDS Max -0.6 VDS = VGS, ID = -250 A VDS = 0 V, VGS = Typ nA A A A VGS = -4.5 V, ID = -2.1A 0.130 0.155 VGS = -3.6 V, ID = -2.0A 0.150 0.180 VGS = -2.5 V, ID = -1.7A 0.215 0.260 Forward Transconductance* gfs VDS = -10 V, ID = -2.1A 5 Schottky Diode Forward Voltage* VSD IS = -0.9 A, VGS = 0 V -0.8 -1.2 V Total Gate Charge Qg 3 6 nC Gate-Source Charge Qgs 0.9 nC Gate-Drain Charge Qgd 0.6 nC Turn-On Delay Time td(on) 13 20 ns VDD = -10 V, RL = 10 35 55 ns ID = -1 A, VGEN = -4.5V, RG = 6 25 40 ns 25 40 ns 40 80 ns Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width 300 s, duty cycle http://www.twtysemi.com VDS = -10V, VGS = -4.5 V, ID = -2.1 A S IF = -0.9 A, di/dt = 100 A/ s 2%. [email protected] 4008-318-123 2 of 2