TYSEMI KI5903DC

Transistors
IC
MOSFE
SMD Type
Product specification
KI5903DC
Features
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
12
Continuous Drain Current (TJ = 150
)*
TA = 25
ID
TA = 85
Pulsed Drain Current
Continuous Source Current *
Maximum Power Dissipation *
PD
TA = 85
Operating Junction and Storage Temperature Range
-1.8
-0.9
2.1
1.1
1.1
0.6
W
-55 to 150
TJ, Tstg
Symbol
5 sec
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
A
260
Parameter
Maximum Junction-to-Ambienta
1.5
10
Soldering Recommendations (Peak Temperature)
t
2.1
2.1
IS
TA = 25
V
2.9
IDM
Unit
Steady-State
RthJF
Typ
Max
50
60
90
110
30
40
Unit
/W
* Surface Mounted on 1" X 1' FR4 Board.
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
IC
Transistors
IC
MOSFE
SMD Type
Product specification
KI5903DC
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current*
ID(on)
Drain-Source On-State Resistance*
rDS(on)
Testconditons
Min
100
-1
-5
VDS = -16V, VGS = 0 V, TJ = 85
-10
- 5 V, VGS = -4.5 V
Unit
V
12 V
VDS = -16V, VGS = 0 V
VDS
Max
-0.6
VDS = VGS, ID = -250 A
VDS = 0 V, VGS =
Typ
nA
A
A
A
VGS = -4.5 V, ID = -2.1A
0.130
0.155
VGS = -3.6 V, ID = -2.0A
0.150
0.180
VGS = -2.5 V, ID = -1.7A
0.215
0.260
Forward Transconductance*
gfs
VDS = -10 V, ID = -2.1A
5
Schottky Diode Forward Voltage*
VSD
IS = -0.9 A, VGS = 0 V
-0.8
-1.2
V
Total Gate Charge
Qg
3
6
nC
Gate-Source Charge
Qgs
0.9
nC
Gate-Drain Charge
Qgd
0.6
nC
Turn-On Delay Time
td(on)
13
20
ns
VDD = -10 V, RL = 10
35
55
ns
ID = -1 A, VGEN = -4.5V, RG = 6
25
40
ns
25
40
ns
40
80
ns
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test; pulse width
300 s, duty cycle
http://www.twtysemi.com
VDS = -10V, VGS = -4.5 V, ID = -2.1 A
S
IF = -0.9 A, di/dt = 100 A/
s
2%.
[email protected]
4008-318-123
2 of 2