KEXIN KI5402DC

IC
IC
SMD Type
N-Channel 30-V (D-S) MOSFET
KI5402DC
Features
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150
)*
TA = 25
ID
TA = 70
Pulsed Drain Current
5 secs
30
Maximum Power Dissipation *
IS
TA = 25
PD
TA = 70
Operating Junction and Storage Temperature Range
4.9
4.8
3.5
2.1
1.1
2.5
1.3
1.3
0.7
W
-55 to 150
TJ, Tstg
Symbol
5 sec
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
A
20
260
Parameter
Maximum Junction-to-Ambienta
V
6.7
Soldering Recommendations (Peak Temperature)
t
Unit
20
IDM
Continuous Source Current *
Steady State
Steady-State
RthJF
Typ
Max
40
50
80
95
15
20
Unit
/W
* Surface Mounted on 1" X 1' FR4 Board.
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1
IC
IC
SMD Type
KI5402DC
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current*
ID(on)
Drain-Source On-State Resistance*
rDS(on)
VDS = 0 V, VGS =
Min
Typ
Max
1.0
V
20 V
100
VDS = 24 V, VGS = 0 V
1
VDS = 24 V, VGS = 0 V, TJ = 55
5
VDS
20
5 V, VGS = 10 V
Unit
nA
A
A
A
VGS = 10 V, ID = 4.9 A
0.030
0.035
VGS = 4.5 V, ID = 3.9 A
0.045
0.055
Forward Transconductance*
gfs
VDS = 10 V, ID = 4.9 A
15
IS = 1.1 A, VGS = 0 V
0.8
1.2
V
13
20
nC
Schottky Diode Forward Voltage*
VSD
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = 15 V, VGS = 10 V, ID = 4.9 A
S
1.3
nC
Gate-Drain Charge
Qgd
3.1
Turn-On Delay Time
td(on)
10
15
ns
VDD = 15 V, RL = 15 Ù
10
15
ns
ID = 1 A, VGEN = 10V, RG = 6
25
40
ns
10
15
ns
30
60
ns
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test; pulse width
2
Testconditons
VDS = VGS, ID = 250 ìA
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300 s, duty cycle
2%.
IF = 1.1 A, di/dt = 100 A/
s
nC