Transistors IC SMD Type Product specification KI4539ADY PIN Configuration Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 secs Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 Steady State 20 ID Maximum Power Dissipation* TA = 25 V 20 V 5.9 4.4 -4.9 -3.7 A 4.7 3.6 -3.9 -2.9 A A 30 IS PD TA = 70 Operating Junction and Storage Temperature Range Unit Steady State -30 IDM Continuous Source Current (Diode Conduction)* 10 secs 30 TA = 70 Pulsed Drain Current P-Channel 1.7 0.9 -1.7 -0.9 A 2 1.1 2 1.1 W 1.3 0.7 1.3 0.7 W -55 to 150 TJ, Tstg *Surface Mounted on 1" X 1" FR4 Board. Absolute Maximum Ratings TA = 25 Parameter Maximum Junction-to-Ambient * t 10 sec RthJA Steady State Maximum Junction-to-Foot(Drain) N-Channel Symbol Steady State RthJF P-Channel Typ Max Typ Max 50 62.5 52 62.5 90 110 90 110 40 40 32 40 Unit /W *Surface Mounted on 1" X 1" FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KI4539ADY Electrical Characteristics TJ = 25 Parameter Symbol Gate Threshold Voltage VGS( th) IGSS Gate Body Leakage Zero Gate Voltage Drain Current IDSS ID(on) On State Drain Currenta Testconditons VDS = VGS, ID = 250 A N-Ch 1 VDS = VGS, ID = -250 P-Ch -1 A rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Gate Resistance Rg Turn On Time td(on) Rise Time tr td( off) Turn Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width Typ Max N-Ch 100 VDS = 0 V VGS = 20 V P-Ch 100 VDS = 24V, VGS = 0 V N-Ch 1 VDS = -24V, VGS = 0 V P-Ch -1 VDS = 24 V, VGS = 0 V, TJ = 55 N-Ch 5 VDS = -24V, VGS = 0 V, TJ = 55 P-Ch -5 VDS 5 V, VGS = 10 V N-Ch 30 VDS -5 V, VGS = -10 V P-Ch -30 0.032 0.036 VGS = -10 V, ID = -4.9A P-Ch 0.043 0.053 VGS = 4.5 V, ID = 4.9A N-Ch 0.042 0.053 VGS = -4.5 V, ID = -3.7A P-Ch 0.075 0.090 VDS = 15 V, ID = 5.9A N-Ch 15 VDS = -15 V, ID = -4.9A P-Ch 9 IS = 1.7A, VGS = 0 V N-Ch 0.80 1.2 IS = -1.7A, VGS = 0 V P-Ch -0.80 -1.2 N-Channel N-Ch 13 20 VDS = 15 V, VGS = 10V, ID = 5.9A P-Ch 15 25 N-Ch 2.3 P-Channel P-Ch 4 VDS = -15 V, VGS = -10 V, ID = -4.9A N-Ch 2 P-Ch 2.0 N-Ch 0.5 2.2 P-Ch 5 12.6 N-Ch 6 12 P-Ch 7 15 ID= 1A, VGEN = 10V, Rg = 6 N-Ch 14 25 P-Ch 10 20 P-Channel N-Ch 30 60 VDD = -15 V, RL = 15 P-Ch 40 80 ID= -1 A, VGEN = -10 V, Rg = 6 N-Ch 5 10 P-Ch 20 40 s V nC VDD = 15 V, RL = 15 s A S N Channel IF = -1.7 A, di/dt = 100 A/ nA A N-Ch IF = 1.7 A, di/dt = 100 A/ Unit V VDS = 0 V VGS = 20 V VGS = 10 V, ID = 5.9A Drain Source On State Resistance* Min N-Ch 30 60 P-Ch 30 60 ns 300 s, duty cycle 2%. http://www.twtysemi.com [email protected] 4008-318-123 2of 2