IC IC SMD Type Product specification KI4980DY Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS 80 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction) * TA = 25 Maximum Power Dissipation * Maximum Junction-to-Ambient* * Surface Mounted on FR4 Board, t http://www.twtysemi.com 3.7 2.9 30 IS 1.7 2.0 A A W 1.3 TA = 70 Operating Junction and Storage Temperature Range V 20 IDM PD Unit TJ, Tstg -55 to 150 RthJA 62.5 /W 10 sec. [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KI4980DY Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current * ID(on) Drain-Source On-State Resistance* rDS(on) Testconditons VDS = VGS, ID = 250 ìA VDS = 0 V, VGS = 1 20 0.075 VGS = 6.0 V, ID = 3.2 A 0.071 0.095 12 IS = 1.7 A, VGS = 0 V Total Gate Charge Qg Rg Turn-On Delay Time Rise Time Turn-Off Delay Time 30 nC 4 nC 3.2 nC 5.1 20 ns VDD = 40 V, RL = 40 10 20 ns ID = 1 A, VGEN = 10 V, RG = 6 Ù 30 60 ns 10 20 ns 75 110 ns tf trr http://www.twtysemi.com V 10 Source-Drain Reverse Recovery Time s, duty cycle S 1.2 tr td(off) 300 A td(on) Fall Time * Pulse test; pulse width 15 VDS = 40 V, VGS = 10V, ID = 3.7 A nA A 0.062 VDS = 15 V, ID = 3.7 A Gate Resistance 20 VGS = 10 V, ID =3.7 A gfs Qgs 100 VDS = 5 V, VGS = 10 V Unit V VDS = 80 V, VGS = 0 V VSD Qgd Max VDS = 80 V, VGS = 0 V, TJ = 55 Forward Transconductance* Gate-Drain Charge Typ 2 20 V Schottky Diode Forward Voltage* Gate-Source Charge Min IF = 1.7 A, di/dt = 100 A/ s 2 %. [email protected] 4008-318-123 2 of 2