Product specification MMBT4403W Features Switching transistor. PNP Silicon. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO -40 V Collector-base voltage VCBO -40 V Emitter-base voltage VEBO -5 V Collector current IC -600 mA Total Device Dissipation FR-5 Board PD 150 mW RèJA 833 /W Thermal Resistance, Junction-to-Ambient Junction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification MMBT4403W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage * V(BR)CEO IC = -1.0 mA, IB = 0 -40 V Collector-base breakdown voltage V(BR)CBO IC = -0.1 mA, IE = 0 -40 V Emitter-base breakdown voltage V(BR)EBO IE = -0.1 mA, IC = 0 -5 V Base cutoff current IBEV VCE = -35 V, VEB = -0.4 V Collector cutoff current ICEX VCE = -35 V, VEB = -0.4 V HFE IC = -0.1 mA, VCE = -1.0 V IC = -1.0 mA, VCE = -1.0 V IC = -10 mA, VCE = -1.0 V IC = -150 mA, VCE = -2.0 V * IC = -500 mA, VCE = -2.0 V * DC current gain VCE(sat) Collector-emitter saturation voltage * VBE(sat) Base-emitter saturation voltage * 30 60 100 100 20 fT ìA -0.1 ìA 300 IC = -150 mA, IB = -15 mA -0.4 IC = -500 mA, IB = -50 mA -0.75 -0.75 IC = -150 mA, IB = -15 mA IC = -500 mA, IB = -50 mA Current-gain-bandwidth product -0.1 V -0.95 -1.3 IC = -20 mA, VCE = -10 V, f = 100 MHz 200 MHz Collector-base capacitance CCb VCB = -10 V, IE = 0, f = 1.0 MHz 8.5 pF Emitter-base capacitance Ceb VBE = -0.5 V, IC = 0, f = 1.0 MHz 30 pF Input impedance hie IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz 1.5 15 kÙ Voltage feedback ratio hre IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz 0.1 8.0 X 10-4 Small-signal current gain hfe IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz 60 500 Output admittance hoe IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz 1.0 100 ìmhos Delay time td VCC = -30 V, VEB = -2.0 V, 15 ns Rise time tr IC = -150 mA, IB1 = -15 mA 20 ns Storage time ts VCC = -30 V, IC = -150 mA, 225 ns Fall time tf IB1 = IB2 = -15 mA 30 ns * Pulse test: pulse width 300 ìs, duty cycle 2.0%. Marking Marking 2T http://www.twtysemi.com [email protected] 4008-318-123 2 of 2