TYSEMI KC847S

SMD Type
Product specification
KC847S(BC847S)
SOT-363
1.3
Unit: mm
+0.1
-0.1
0.65
0.525
Features
+0.15
2.3-0.15
+0.1
1.25-0.1
High current gain
0.36
Low collector-emitter saturation voltage
+0.05
0.1-0.02
+0.05
0.95-0.05
0.1max
+0.1
0.3-0.1
+0.1
2.1-0.1
1 E1
4 E2
2 B1
5 B2
3 C2
6 C1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6.0
V
IC
100
mA
Collector Current
Total Device Dissipation
300
PD
2.4
Derate above 25
Thermal Resistance, Junction to Ambient
R
Operating and Storage Junction Temperature Range
415
JA
TJ, Tstg
mW
mW/
/W
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector-Base Breakdown Voltage
VCBO
IC = 10
A, IE = 0
Min
Typ
Max
Unit
50
V
Collector-Emitter Breakdown Voltage
VCEO
IC = 10 mA, IB = 0
45
V
Emitter-Base Breakdown Voltage
VEBO
IE = 10
6.0
V
Collector-Cutoff Current
ICBO
DC Current Gain
hFE
A, IC = 0
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 2.0 mA, VCE = 5.0 V
110
VBE(on)
0.58
IC = 10 mA, VCE = 5.0 V
Output Capacitance
Cob
Transistion frequency
fT
5.0
A
0.25
IC = 100 mA, IB = 5.0 mA
Base-Emitter ON Voltage
nA
630
IC = 10 mA, IB = 0.5 mA
IC = 2.0 mA, VCE = 5.0 V
15
V
0.65
V
0.7
V
0.77
V
VCB = 10 V, f = 1.0 MHz
2.0
pF
IC = 20 mA, VCE = 5.0,f = 100 mHz
200
MHz
Marking
Marking
1C
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4008-318-123
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