KEXIN BSS64

Transistors
IC
SMD Type
NPN General Purpose Amplifier
BSS64
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
1
0.55
NPN general purpose amplifier
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Absolute Maximum Ratings Ta = 25
Symbol
Rating
3.collector
Unit
Collector-emitter voltage
VCE0
80
V
Collector-base voltage
VCBO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
200
mA
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Total device dissipation
Derate above 25
PD
350
2.8
mW
mW/
RèJA
357
/W
Thermal resistance, junction to ambient
Parameter
2.Emitter
unless otherwise noted
Parameter
Electrical Characteristics Ta = 25
1.Base
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
unless otherwise noted
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter breakdown voltage
V(BR)CEO
IC = 4.0 mA, IB = 0
80
Collector-base breakdown voltage
V(BR)CBO
IC = 100 ìA, IE = 0
120
V
Emitter-base breakdown voltage
V(BR)EBO
IE = 100 ìA, IC = 0
5
V
Collector-cutoff current
ICBO
VCB = 90 V, IE = 0
0.1
ìA
VCB = 90 V, IE = 0, TA = 150
50
ìA
200
nA
IC = 4.0 mA, IB = 400ìA
0.15
V
IC = 50 mA, IB = 15 mA
0.2
V
IC = 4.0 mA, IB = 400 ìA
1.2
V
Emitter-base cut-off current
IEBO
VEB = 5.0 V, IC = 0
DC current gain
hFE
IC = 10 mA, VCE = 1.0 V
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Current gain - bandwidth product
Output capacitance
fT
Cob
V
IC = 4.0 mA, VCE = 10,f = 35 MHz
VCB = 10 V, f = 1.0 MHz
20
60
MHz
5
pF
Marking
Marking
U3
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