Transistors IC SMD Type NPN General Purpose Amplifier BSS64 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Absolute Maximum Ratings Ta = 25 Symbol Rating 3.collector Unit Collector-emitter voltage VCE0 80 V Collector-base voltage VCBO 120 V Emitter-base voltage VEBO 5 V Collector current IC 200 mA Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Total device dissipation Derate above 25 PD 350 2.8 mW mW/ RèJA 357 /W Thermal resistance, junction to ambient Parameter 2.Emitter unless otherwise noted Parameter Electrical Characteristics Ta = 25 1.Base +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 unless otherwise noted Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage V(BR)CEO IC = 4.0 mA, IB = 0 80 Collector-base breakdown voltage V(BR)CBO IC = 100 ìA, IE = 0 120 V Emitter-base breakdown voltage V(BR)EBO IE = 100 ìA, IC = 0 5 V Collector-cutoff current ICBO VCB = 90 V, IE = 0 0.1 ìA VCB = 90 V, IE = 0, TA = 150 50 ìA 200 nA IC = 4.0 mA, IB = 400ìA 0.15 V IC = 50 mA, IB = 15 mA 0.2 V IC = 4.0 mA, IB = 400 ìA 1.2 V Emitter-base cut-off current IEBO VEB = 5.0 V, IC = 0 DC current gain hFE IC = 10 mA, VCE = 1.0 V Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Current gain - bandwidth product Output capacitance fT Cob V IC = 4.0 mA, VCE = 10,f = 35 MHz VCB = 10 V, f = 1.0 MHz 20 60 MHz 5 pF Marking Marking U3 www.kexin.com.cn 1