TYSEMI MMSTA13

Transistors
SMD Type
Product specification
MMSTA13
Features
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
High Current Gain
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
300
mA
Power Dissipation
Pd
200
mW
625
/W
Thermal Resistance, Junction to Ambient
R
Operating and Storage and Temperature Range
JA
Tj, TSTG
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector-Base Breakdown Voltage
VCBO
IC = 100 A, IE = 0
Min
Typ
Max
30
Unit
V
Collector Cutoff Current
ICBO
VCB = 30V, IE = 0
100
nA
Collector Cutoff Current
IEBO
VCE = 10V, IC = 0
100
nA
DC Current Gain
hFE
1.5
V
IC = 10mA, VCE = 5V
5,000
IC = 100mA, VCE =5V
10,000
Collector-Emitter Saturation Voltage
VCE(sat) IC = 100mA, IB = 100 A
Base-Emitter Saturation Voltage
VBE(sat) IC = 100mA,VCE=5.0V
2.0
V
Output Capacitance
Cobo
VCB = 10V, f = 1.0MHz, IE = 0
8.1
pF
Input Capacitance
Cibo
VEB = 0.5V, f = 1.0MHz, IC = 0
15
pF
Current Gain-Bandwidth Product
fT
VCE = 5.0V, IC =10mA,f = 100MHz
125
MHz
Marking
Marking
K2D
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Transistors
SMD Type
Product specification
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
MMSTA13
150
100
50
0
0
25
50
75
100
125
150
175
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
IC
IB = 1000
TA = -50°C
TA = 25°C
TA = 150°C
VBE(ON), BASE EMITTER VOLTAGE (V)
1,000,000
hFE, DC CURRENT GAIN
VCE = 5V
TA = 150°C
10,000
TA = -50°C
TA = 25°C
1,000
100
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs
Collector Current
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1000
100
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
100,000
10
1
200
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1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
VCE = 5V
TA = -50°C
TA = 25°C
TA = 150°C
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage
vs. Collector Current
4008-318-123
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Transistors
SMD Type
Product specification
MMSTA13
1000
fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product
vs Collector Current
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[email protected]
4008-318-123
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