Transistors SMD Type Product specification MMSTA13 Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 10 V Collector Current IC 300 mA Power Dissipation Pd 200 mW 625 /W Thermal Resistance, Junction to Ambient R Operating and Storage and Temperature Range JA Tj, TSTG -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-Base Breakdown Voltage VCBO IC = 100 A, IE = 0 Min Typ Max 30 Unit V Collector Cutoff Current ICBO VCB = 30V, IE = 0 100 nA Collector Cutoff Current IEBO VCE = 10V, IC = 0 100 nA DC Current Gain hFE 1.5 V IC = 10mA, VCE = 5V 5,000 IC = 100mA, VCE =5V 10,000 Collector-Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 100 A Base-Emitter Saturation Voltage VBE(sat) IC = 100mA,VCE=5.0V 2.0 V Output Capacitance Cobo VCB = 10V, f = 1.0MHz, IE = 0 8.1 pF Input Capacitance Cibo VEB = 0.5V, f = 1.0MHz, IC = 0 15 pF Current Gain-Bandwidth Product fT VCE = 5.0V, IC =10mA,f = 100MHz 125 MHz Marking Marking K2D http://www.twtysemi.com [email protected] 4008-318-123 1of 3 Transistors SMD Type Product specification VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) MMSTA13 150 100 50 0 0 25 50 75 100 125 150 175 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 IC IB = 1000 TA = -50°C TA = 25°C TA = 150°C VBE(ON), BASE EMITTER VOLTAGE (V) 1,000,000 hFE, DC CURRENT GAIN VCE = 5V TA = 150°C 10,000 TA = -50°C TA = 25°C 1,000 100 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current http://www.twtysemi.com 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 100,000 10 1 200 [email protected] 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 VCE = 5V TA = -50°C TA = 25°C TA = 150°C 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current 4008-318-123 2of 3 Transistors SMD Type Product specification MMSTA13 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current http://www.twtysemi.com [email protected] 4008-318-123 3of 3