Transistors SMD Type Product specification KMBT2907 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ■ Features 0.4 3 1 0.55 ● Power Dissipation :PD=250mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Current to Continuous :IC= -600mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-Base Voltage Parameter VCBO -60 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V IC -600 mA PD Collector Current - Continuous Total Device Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range http://www.twtysemi.com 250 mW RθJA 500 ℃/ W TJ, Tstg -55 to +150 ℃ [email protected] 4008-318-123 1 of 3 Transistors SMD Type Product specification KMBT2907 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = -10 μA, IE = 0 -60 V Collector-Emitter Breakdown Voltage* V(BR)CEO IC = -10 mA, IB = 0 -40 V Emitter-Base Breakdown Voltage V(BR)EBO IE = -10μA, IC = 0 -5 V Base Cutoff Current IB VEB = -0.5 V -50 nA Collector Cutoff Current ICEX VCE = -30 V -50 nA Collector Cutoff Current ICBO VCB = -50 V, IE = 0 -20 nA -20 μA VCB = -50 V, IE = 0, TA = 150℃ DC Current Gain hFE Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage Current Gain - Bandwidth Product VCE(sat) VBE(sat) fT IC = -0.1 mA, VCE = -10 V 35 IC = -1.0 mA, VCE = -10 V 50 IC = -10 mA, VCE = -10 V 75 IC = -150 mA, VCE = -10 V 100 IC = -500 mA, VCE = -10 V 30 300 IC = -150 mA, IB = -15 mA -0.4 V IC = -500 mA, IB = -50 mA -1.6 V IC = -150 mA, IB = -15 mA -1.3 V IC = -500 mA, IB = -50 mA -2.6 V IC = -50 mA, VCE = -20 V,f = 100 MHz 200 MHz Output Capacitance Cobo VCB = -10 V, IE = 0,f = 100 kHz 8.0 pF Input Capacitance Cibo VEB = -2.0 V, IC = 0,f = 100 kHz 30 pF Turn-on Time ton 45 ns Delay Time td Rise Time tr Turn-off Time toff Storage Time ts Fall Time tf VCC = -30 V, IC = -150 mA,IB1 = -15 mA VCC = -6.0 V, IC = -150 mA,IB1 = IB2 = -15 mA 10 ns 40 ns 100 ns 80 ns 30 ns ■ Marking Marking W2F http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 Transistors Transistors SMD Type Type SMD Product specification KMBT2907 VCE=5V 400 125 C 300 25 C 200 100 -40 C 0 0.1 0.3 1 3 10 30 100 300 IC COLLECTOR CURRENT(mA) FIG.1 Typical Pulsed Current Gain vs Collector Current 1 -40 C 0.8 25 C 0.6 125 C 0.4 b=10 0.2 0 1 10 100 500 Ic-COLLECTOR CURRENT (mA) 100 0.5 b=10 0.4 0.3 25 C 0.2 125 C 0.1 -40 C 0 1 10 100 500 IC COLLECTOR CURRENT(mA) FIG.2 Collector-Emitter Saturation Voltage vs collector Current 1 0.8 -40 C 25 C 0.6 125 C 0.4 VCE=5V 0.2 0 0.1 1 10 25 Ic-COLLECTOR CURRENT (mA) FIG.4 Base Emitter ON Voltage vs Collector Current 20 VCB=35V CAPACITANCE (pF) ICBO-COLLECTOR CUREENT (nA) FIG.3 Base-Emitter Saturation Voltage vs Collector Current VCEBAT COLLECTOR EMITTER VOLTAGE (V) 500 VBEON BASE EMITTER ON VOLTAGE (V) VBEST BASE EMITTER VOLTAGE (V) hFE TYPICAL PULSED CURRENT GAIN Typical Electrical Characteristics 10 1 0.1 0.01 25 50 75 100 125 TA- AMBIENT TEMPERATURE ( C) FIG.5 Collector-Cutoff Current vs. Ambient Temperature http://www.twtysemi.com [email protected] 16 12 Cib 8 Cob 4 0 -0.1 -1 -10 -50 REVERSE BIAS VOLTAGE (V) FIG.6 Input and Output Capacitance vs Reverse Bias Voltage 4008-318-123 3 of 3