Transistors IC SMD Type Product specification 2SC4177 Features High dc current gain High voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 60V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 5V, IC = 0 0.1 ìA hFE VCE = 6V , IC = 1.0mA DC current gain * Testconditons Min 200 600 Collector-emitter saturation voltage * VCE(sat) IC = 100mA, IB = 10mA 0.15 0.3 V Base-emitter saturation voltage * VBE(sat) IC = 100mA, IB = 10mA 0.86 1.0 V 0.62 0.65 Base emitter voltage * Gain bandwidth product Output capacitance *. PW 90 Typ VBE VCE = 6V, IC = 1.0mA fT VCE = 6V, IE = -10mA 250 MHz VCE = 6V, IE = 0, f = 1MHz 3.0 pF Cob 0.55 V 350ìs,duty cycle 2% hFE Classification Marking L4 hFE 90 180 http://www.twtysemi.com L5 135 L6 270 200 400 L7 300 [email protected] 600 4008-318-123 1 of 1