Product specification ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35⍀; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance SOT23 • Fast switching speed • Low threshold • Low gate drive • SOT23 package APPLICATIONS • DC - DC converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXM61P03FTA 7 8 embossed 3,000 ZXM61P03FTC 13 8 embossed 10,000 Pin out DEVICE MARKING P03 Top view http://www.twtysemi.com [email protected] 1 of 3 Product specification ZXM61P03F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate- Source Voltage V GS ⫾20 V ID -1.1 -0.9 A Continuous Drain Current (VGS=-10V; (VGS=-10V; TA=25°C)(b) TA=70°C)(b) Pulsed Drain Current (c) I DM -4.3 A Continuous Source Current (Body Diode)(b) IS -0.88 A I SM -4.3 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C Pulsed Source Current (Body Diode)(c) THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. http://www.twtysemi.com [email protected] 2 of 3 Product specification ZXM61P03F ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS -30 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) TYP. MAX. UNIT CONDITIONS. STATIC g fs I D =-250µA, V GS =0V -1 µA V DS =-30V, V GS =0V ⫾100 nA -1.0 Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) V 0.35 0.55 0.44 V GS =⫾20V, V DS =0V V I =-250µA, V DS = V GS D Ω Ω V GS =-10V, I D =-0.6A V GS =-4.5V, I D =-0.3A S V DS =-10V,I D =-0.3A DYNAMIC (3) Input Capacitance C iss 140 pF Output Capacitance C oss 45 pF Reverse Transfer Capacitance C rss 20 pF Turn-On Delay Time t d(on) 1.9 ns Rise Time tr 2.9 ns Turn-Off Delay Time t d(off) 8.9 ns Fall Time tf 5.0 ns Total Gate Charge Qg 4.8 nC Gate-Source Charge Q gs 0.62 nC Gate Drain Charge Q gd 1.3 nC Diode Forward Voltage (1) V SD -0.95 Reverse Recovery Time (3) t rr Reverse Recovery Charge(3) Q rr V DS =-25 V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =-15V, I D =-0.6A R G =6.2Ω, R D =25Ω (Refer to test circuit) V DS =-24V,V GS =-10V, I D =-0.6A (Refer to test circuit) SOURCE-DRAIN DIODE V T j =25°C, I S =-0.6A, V GS =0V 14.8 ns T j =25°C, I F =-0.6A, di/dt= 100A/µs 7.7 nC NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle ⱕ2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. http://www.twtysemi.com [email protected] 3 of 3