TYSEMI ZXM61P03F

Product specification
ZXM61P03F
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=-30V; RDS(ON)=0.35⍀; ID=-1.1A
DESCRIPTION
This new generation of high density MOSFETs from TY utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
SOT23
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXM61P03FTA
7
8 embossed
3,000
ZXM61P03FTC
13
8 embossed
10,000
Pin out
DEVICE MARKING
P03
Top view
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Product specification
ZXM61P03F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
-30
V
Gate- Source Voltage
V GS
⫾20
V
ID
-1.1
-0.9
A
Continuous Drain Current
(VGS=-10V;
(VGS=-10V;
TA=25°C)(b)
TA=70°C)(b)
Pulsed Drain Current (c)
I DM
-4.3
A
Continuous Source Current (Body Diode)(b)
IS
-0.88
A
I SM
-4.3
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
625
5
mW
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
Pulsed Source Current (Body Diode)(c)
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R θJA
200
°C/W
Junction to Ambient (b)
R θJA
155
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
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Product specification
ZXM61P03F
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-30
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
TYP.
MAX.
UNIT CONDITIONS.
STATIC
g fs
I D =-250µA, V GS =0V
-1
µA
V DS =-30V, V GS =0V
⫾100
nA
-1.0
Static Drain-Source On-State Resistance (1) R DS(on)
Forward Transconductance (3)
V
0.35
0.55
0.44
V GS =⫾20V, V DS =0V
V
I =-250µA, V DS = V GS
D
Ω
Ω
V GS =-10V, I D =-0.6A
V GS =-4.5V, I D =-0.3A
S
V DS =-10V,I D =-0.3A
DYNAMIC (3)
Input Capacitance
C iss
140
pF
Output Capacitance
C oss
45
pF
Reverse Transfer Capacitance
C rss
20
pF
Turn-On Delay Time
t d(on)
1.9
ns
Rise Time
tr
2.9
ns
Turn-Off Delay Time
t d(off)
8.9
ns
Fall Time
tf
5.0
ns
Total Gate Charge
Qg
4.8
nC
Gate-Source Charge
Q gs
0.62
nC
Gate Drain Charge
Q gd
1.3
nC
Diode Forward Voltage (1)
V SD
-0.95
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge(3)
Q rr
V DS =-25 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =-15V, I D =-0.6A
R G =6.2Ω, R D =25Ω
(Refer to test circuit)
V DS =-24V,V GS =-10V,
I D =-0.6A
(Refer to test circuit)
SOURCE-DRAIN DIODE
V
T j =25°C, I S =-0.6A,
V GS =0V
14.8
ns
T j =25°C, I F =-0.6A,
di/dt= 100A/µs
7.7
nC
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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