ZXMN3B14F

Product specification
ZXMN3B14F
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
V(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5A
DESCRIPTION
This new generation of Trench MOSFETs from Ty utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
PACKAGE
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3B14FTA
7”
8mm
3,000 units
ZXMN3B14FTC
13”
8mm
10,000 units
DEVICE MARKING
• 3B4
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 3
Product specification
ZXMN3B14F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
30
V
Gate-Source Voltage
V GS
⫾12
V
Continuous Drain Current @ V GS = 4.5V; T A =25°C (b)
@ V GS = 4.5V; T A =70°C (b)
@ V GS = 4.5V; T A =25°C (a)
ID
3.5
2.9
2.9
A
A
A
Pulsed Drain Current (c)
I DM
16
A
Continuous Source Current (Body Diode) (b)
IS
2.4
A
Pulsed Source Current (Body Diode) (c)
I SM
16
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1
W
8
mW/°C
Power Dissipation at T A =25°C (b)
PD
1.5
W
12
mW/°C
-55 to +150
°C
Linear Derating Factor
Operating and Storage Temperature Range
T j , T stg
LIMIT
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R ⍜JA
125
°C/W
Junction to Ambient (b)
R ⍜JA
83
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.
http://www.twtysemi.com
[email protected]
4008-318-123
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Product specification
ZXMN3B14F
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
V (BR)DSS
30
TYP.
MAX. UNIT CONDITIONS
STATIC
Zero Gate Voltage Drain Current
I DSS
1
␮A
I D = 250␮A, V GS =0V
V DS = 30V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =⫾12V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
R DS(on)
Drain-Source Breakdown Voltage
V
0.7
Resistance (1)
Forward Transconductance
DYNAMIC (3)
(1) (3)
V
I D = 250␮A, V DS =V GS
0.080
⍀
0.140
⍀
V GS = 4.5V, I D = 3.1A
V GS = 2.5V, I D = 2.2A
V DS = 15V, I D = 3.1A
g fs
8.5
S
Input Capacitance
C iss
568
pF
Output Capacitance
C oss
101
pF
Reverse Transfer Capacitance
C rss
66
pF
V DS = 15V, V GS =0V
f=1MHz
SWITCHING (2) (3)
Turn-On-Delay Time
t d(on)
3.6
ns
Rise Time
tr
4.9
ns
Turn-Off Delay Time
t d(off)
17.3
ns
Fall Time
tf
9.8
ns
V DD = 15V, V GS = 4.5V
I D = 1A
R G ≅ 6.0⍀
Total Gate Charge
Qg
6.7
nC
Gate-Source Charge
Q gs
1.4
nC
Gate Drain Charge
Q gd
1.8
nC
Diode Forward Voltage (1)
V SD
0.82
Reverse Recovery Time (3)
t rr
10.8
ns
T j =25°C, I F = 1.6A,
Reverse Recovery Charge (3)
Q rr
4.54
nC
di/dt=100A/␮s
V DS = 15V, V GS = 4.5V
I D = 3.1A
SOURCE-DRAIN DIODE
0.95
V
T j =25°C, I S = 3.1A,
V GS =0V
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
http://www.twtysemi.com
[email protected]
4008-318-123
3 of 3