TYSEMI ZXMN2B01F

Product specification
ZXMN2B01F
20V SOT23 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
RDS(on) (⍀)
ID (A)
0.100 @ VGS= 4.5V
2.4
0.150 @ VGS= 2.5V
2.0
0.200 @ VGS= 1.8V
1.7
V(BR)DSS
20
Description
This new generation trench MOSFET from TY features low onresistance achievable with low gate drive.
Features
D
•
Low on-resistance
•
Fast switching speed
•
Low gate drive capability
•
SOT23 package
G
S
Applications
•
DC-DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
S
D
Ordering information
G
Device
ZXMN2B01FTA
Reel size
(inches)
Tape width
(mm)
Quantity per reel
7
8
3,000
Top view
Device marking
2B1
http://www.twtysemi.com
[email protected]
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Product specification
ZXMN2B01F
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGS
±8
V
ID
2.4
A
@ VGS= 4.5V; Tamb=70°C(b)
1.9
A
@ VGS= 4.5V; Tamb=25°C(a)
2.1
A
IDM
11.8
A
IS
1.4
A
Pulsed source current (body diode)(c)
ISM
11.8
A
Power dissipation at Tamb =25°C(a)
PD
625
mW
5
mW/°C
806
mW
6.4
mW/°C
Tj, Tstg
-55 to +150
°C
Symbol
Limit
Unit
Junction to ambient(a)
R⍜JA
200
°C/W
Junction to ambient(b)
R⍜JA
155
°C/W
Continuous drain current
@ VGS= 4.5V; Tamb=25°C(b)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Linear derating factor
Power dissipation at Tamb
PD
=25°C(b)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction
temperature.
http://www.twtysemi.com
[email protected]
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Product specification
ZXMN2B01F
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
V(BR)DSS
20
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown
voltage
V
ID= 250␮A, VGS=0V
1
␮A
VDS= 20V, VGS=0V
100
nA
VGS=±8V, VDS=0V
1.0
V
ID= 250␮A, VDS=VGS
0.100
⍀
VGS= 4.5V, ID= 2.4A
0.150
⍀
VGS= 2.5V, ID= 2.0A
0.200
⍀
VGS= 1.8V, ID= 1.7A
6.1
S
VDS= 10V, ID= 2.4A
VDS= 10V, VGS=0V
f=1MHz
Zero gate voltage drain current IDSS
Gate-body leakage
IGSS
Gate-source threshold voltage
VGS(th)
Static drain-source on-state
resistance (*)
RDS(on)
Forward transconductance(*)(‡) gfs
0.4
Dynamic(‡)
Input capacitance
Ciss
370
pF
Output capacitance
Coss
81
pF
Reverse transfer capacitance
Crss
46
pF
Turn-on-delay time
td(on)
2.2
ns
Rise time
tr
3.6
ns
Turn-off delay time
td(off)
17.8
ns
Fall time
tf
10.5
ns
Total gate charge
Qg
4.8
nC
Gate-source charge
Qgs
0.6
nC
Gate drain charge
Qgd
1.0
nC
Diode forward voltage(*)
VSD
0.73
Reverse recovery time(‡)
trr
Reverse recovery charge(‡)
Qrr
Switching (†) (‡)
VDD= 10V, VGS= 4.5V
ID= 1A
RG ≈ 6.0⍀
VDS= 10V, VGS= 4.5V
ID= 2.4A
Source-drain diode
0.95
V
Tj=25°C, IS= 1.2A,
VGS=0V
6.7
ns
1.3
nC
Tj=25°C, IF= 1.1A,
di/dt=100A/ms
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
http://www.twtysemi.com
[email protected]
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