TYSEMI ZXMN6A07FTA

Product specification
ZXMN6A07F
60V SOT23 N-channel enhancement mode mosfet
Summary
RDS(on) (⍀)
ID (A)
0.250 @ VGS= 10V
1.4
0.350 @ VGS= 4.5V
1.2
V(BR)DSS
60
Description
D
This new generation trench MOSFET from Zetex utilizes a unique
structure combining the benefits of low on-state resistance with fast
switching speed.
G
Features
S
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
SOT23 package
S
D
Applications
•
DC-DC converters
•
Power management functions
•
Relay and solenoid driving
•
Motor control
G
Top view
Ordering information
Device
ZXMN6A07FTA
Reel size
(inches)
Tape width
(mm)
Quantity per
reel
7
8
3,000
Device marking
7N6
http://www.twtysemi.com
[email protected]
4008-318-123
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Product specification
ZXMN6A07F
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGS
± 20
V
ID
1.4
A
Continuous drain current @ VGS= 10V; Tamb=25°C(b)
@ VGS= 10V; Tamb=70°C(b)
1.1
@ VGS= 10V; Tamb=25°C(a)
1.2
IDM
6.9
A
IS
1
A
Pulsed source current (body diode)(c)
ISM
6.9
A
Power dissipation at Tamb =25°C(a)
PD
625
mW
5
mW/°C
806
mW
6.4
mW/°C
Tj, Tstg
-55 to +150
°C
Symbol
Limit
Unit
Junction to ambient
R⍜JA
200
°C/W
Junction to ambient
R⍜JA
155
°C/W
Pulsed drain current(c)
Continuous source current (body diode)(b)
Linear derating factor
PD
Power dissipation at Tamb =25°C(b)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction
temperature.
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[email protected]
4008-318-123
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Product specification
ZXMN6A07F
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
V(BR)DSS
60
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown
voltage
V
ID= 250␮A, VGS=0V
1
␮A
VDS= 60V, VGS=0V
100
nA
VGS=±20V, VDS=0V
3.0
V
ID= 250␮A, VDS=VGS
0.250
⍀
VGS= 10V, ID= 1.8A
0.350
⍀
VGS= 4.5V, ID= 1.3A
2.3
S
VDS= 15V, ID= 1.8A
VDS= 40V, VGS=0V
f=1MHz
Zero gate voltage drain current IDSS
Gate-body leakage
IGSS
Gate-source threshold voltage VGS(th)
Static drain-source on-state
resistance (*)
1.0
RDS(on)
Forward transconductance(*)(‡) gfs
Dynamic(‡)
Input capacitance
Ciss
166
pF
Output capacitance
Coss
19.5
pF
Reverse transfer capacitance
Crss
8.7
pF
Turn-on-delay time
td(on)
1.8
ns
Rise time
tr
1.4
ns
Turn-off delay time
td(off)
4.9
ns
Fall time
tf
2.0
ns
Total gate charge
Qg
1.65
Total gate charge
Qg
3.2
nC
Gate-source charge
Qgs
0.67
nC
Gate drain charge
Qgd
0.82
nC
Diode forward voltage(*)
VSD
0.80
Reverse recovery time(‡)
trr
Reverse recovery charge(‡)
Qrr
Switching (†) (‡)
VDD= 30V, VGS= 10V
ID= 1.8A
RG ≈ 6.0⍀
VDS= 30V, VGS= 5V
ID= 1.8A
VDS= 30V, VGS= 10V
ID= 1.8A
Source-drain diode
0.95
V
Tj=25°C, IS= 0.45A,
VGS=0V
20.5
ns
21.3
nC
Tj=25°C, IF= 1.8A,
di/dt=100A/␮s
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
http://www.twtysemi.com
[email protected]
4008-318-123
3 of 3