Product specification ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 package APPLICATIONS • DC-DC Converters • Power Management functions • Disconnect switches • Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN3B01FTA 7” 8mm 3000 units ZXMN3B01FTC 13” 8mm 10000 units DEVICE MARKING TOP VIEW • 3B1 http://www.twtysemi.com [email protected] 1 of 3 Product specification ZXMN3B01F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 V Gate-Source Voltage V GS ⫾12 V ID 2.0 A 1.6 A 1.7 A Continuous Drain Current @ V GS =4.5V; T A =25°C (b) @ V GS =4.5V; T A =70°C (b) @ V GS =4.5V; T A =25°C (a) Pulsed Drain Current (c) I DM 9.4 A Continuous Source Current (Body Diode) (b) IS 1.3 A Pulsed Source Current (Body Diode) (c) I SM 9.4 A PD 625 mW 5 mW/°C Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C (b) Linear Derating Factor PD Operating and Storage Temperature Range T j , T stg 806 mW 6.4 mW/°C -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R ⍜JA 200 °C/W (b) R ⍜JA 155 °C/W Junction to Ambient NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature. http://www.twtysemi.com [email protected] 2 of 3 Product specification ZXMN3B01F ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Drain-Source Breakdown Voltage V (BR)DSS 30 V I D =250A, V GS =0V Zero Gate Voltage Drain Current I DSS 1 A V DS =30V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =⫾12V, V DS =0V Gate-Source Threshold Voltage V GS(th) V Static Drain-Source On-State R DS(on) I =250A, V DS = V GS D V GS =4.5V, I D =1.7A STATIC 0.7 (1) Resistance Forward Transconductance (1) (3) 0.150 ⍀ 0.240 ⍀ V GS =2.5V, I D =1.2A S V DS =15V,I D =1.7A g fs 4 Input Capacitance C iss 258 pF Output Capacitance C oss 50 pF C rss 30 pF DYNAMIC (3) Reverse Transfer Capacitance V DS = 15V, V GS =0V, f=1MHz SWITCHING (2) (3) Turn-On Delay Time t d(on) 2.69 ns Rise Time tr 3.98 ns V DD = 15V, V GS = 4.5V I D = 1A Turn-Off Delay Time t d(off) 8 ns Fall Time tf 5.27 ns R G ≅ 6.0⍀ Total Gate Charge Qg 2.93 nC Gate-Source Charge Q gs 0.57 nC V DS =15V,V GS = 4.5V, Gate-Drain Charge Q gd 0.92 nC I D =1.7A V SD 0.85 SOURCE-DRAIN DIODE Diode Forward Voltage (1) 0.95 V T J =25°C, I S = 1.7A, V GS =0V Reverse Recovery Time (3) t rr 10.85 ns T J =25°C, I F = 1.3A, Reverse Recovery Charge (3) Q rr 5 NC di/dt= 100A/s NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. http://www.twtysemi.com [email protected] 3 of 3