UMS A3667A A3688A YYWWG 6-11 GHz Variable Gain Amplifier SMU A8 78 663A GWWYY CHA4861-QGG GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4861-QGG is a variable gain broadband four stage monolithic amplifier. It is designed for a wide range of applications, typically commercial communication systems. The circuit is manufactured with a power pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. YYWWG UMS UMS A3667A A3688A UMS A4861 UMS A3667A A3688A A3667A A3688A YYWW YYWWG YYWWG UMS A3667A A3688A YYWWG SMU A8 78 663A GWWYY UMS A3688A A3667A YYWWG SMU A878663A GWWYY Main Features ■ Broadband performances: 6-11GHz ■ 23dB gain ■ 29dBm Output IP3 ■ 20dB Gain control range ■ DC bias: Vd=4.5V @ Id=160mA ■ 28L-QFN5x5 UMS A3687A Linear gain versus gain control 30 25 20 Gain (dB) 15 10 5 0 -5 -10 -1.5V -0.8V -0.6V -0.4V -0.2V 0V -15 4 5 6 7 8 9 10 11 12 13 14 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C, Vd = +4.5V Symbol Parameter Freq Frequency range Gain Linear Gain ΔG Gain control range OIP3 3rd order intercept point Ref. : DSCHA4861-QGG2262 - 18 Sep 12 1/14 Min 6 Typ Max 11 23 20 29 Unit GHz dB dB dBm Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4861-QGG 6-11 GHz Variable Gain Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +4.5V Symbol Parameter Min Freq Frequency range 6 Gain Linear Gain without control NF Noise Figure at maximum gain RLin Input return loss RLout Output return loss OIP3 Output 3rd order intercept point @ max. gain OIP3 Output 3rd order intercept point @ min. gain P1dB Power at 1dB compression @ all gain ΔG Gain control range VG12, DC gate voltage stage 1,2, 3 VG3 GC DC gain control voltage (GC1 & GC2) -2.0 Vd DC drain voltage Id Quiescent drain current (1) These values are representative of onboard measurements. (1) Id not affected by GC Typ Max 11 Unit GHz dB dB dB dB dBm dBm dBm dB V 0 V V mA 23 9 -10 -12 29 26 24 20 -1.3 4.5 160 Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 5V V Id Drain bias current 230 mA VG12-VG3 Gate bias voltage -2 to +0.4 V GC1-GC2 Gain control voltage -2.5 to +0.6 V (2) Pin Maximum peak input power overdrive +7 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA4861-QGG2262 - 18 Sep 12 2/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4861-QGG 6-11 GHz Variable Gain Amplifier Device thermal performances All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A derating must be applied on the dissipated power if the Tcase temperature can not be maintained below than the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF). DEVICE THERMAL SPECIFICATION : CHA4861-QGG Recommended max. junction temperature (Tj max) : 128 Junction temperature absolute maximum rating : 175 Max. continuous dissipated power (Pdiss. Max.) : 1,6 => Pdiss. Max. derating above Tcase(1)= 85 °C : 37 Junction-Case thermal resistance (Rth J-C)(2) : <26 Minimum Tcase operating temperature(3) : -40 (3) Maximum Tcase operating temperature : 85 Minimum storage temperature : -55 Maximum storage temperature : 150 °C °C W mW/°C °C/W °C °C °C °C (1) Derating at junctio n temperature co nstant = Tj max. (2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased. (3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w). 1,8 1,4 1,2 1 0,8 0,6 0,4 Pdiss. Max. @Tj <Tj max (W) 0,2 0 -50 -25 0 25 50 75 100 125 150 Tcase Pdiss. Max. @Tj <Tj max (W) 1,6 Example: QFN 16L 3x3 Location of temperature reference point (Tcase) on package's bottom side Tcase (°C) 6,4 Ref. : DSCHA4861-QGG2262 - 18 Sep 12 3/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4861-QGG 6-11 GHz Variable Gain Amplifier Typical Package Sij parameters Tamb.= +25°C, Vd = +4.5V, Id = 160 mA Freq S11 PhS11 S12 PhS12 S21 (GHz) (dB) (°) (dB) (°) (dB) 2.0 -1.2 92 -79.1 36 -35.5 3.0 -1.4 45 -81.8 14 -19.1 4.0 -1.5 -4 -72.3 22 9.9 5.0 -2.3 -66 -84.7 -109 21.9 6.0 -7.3 -149 -71.7 61 23.9 7.0 -19.6 78 -68 -6 24.9 8.0 -14 -38 -73.6 -90 23.2 9.0 -11.4 -81 -78.6 -26 23.1 10.0 -10.8 -114 -68.6 -116 23.7 11.0 -11.1 -150 -59.9 -173 23.9 12.0 -12.2 -96 -61.1 125 22.2 13.0 -8.3 -157 -61.3 111 9 14.0 -9.1 170 -56.1 114 -0.5 15.0 -10.9 144 -50.5 70 -8.8 16.0 -13.7 77 -50.2 -15 -18.5 17.0 -16.6 68 -52.3 -69 -29.8 18.0 -17.6 69 -57.6 -15 -39.6 19.0 -16.8 64 -50.9 -45 -45.5 20.0 -15 48 -51.7 -85 -49.7 21.0 -13.4 -157 -56.3 -78 -54.5 22.0 -11.9 170 -51.7 -84 -51.6 23.0 -10.1 136 -50.8 -82 -50.8 24.0 -8.6 99 -46.4 -79 -45.6 25.0 -6.9 61 -43.4 -108 -41.5 26.0 -5.3 27 -44.3 -136 -43.7 27.0 -4.4 -6 -42.1 -137 -42.8 28.0 -2.8 -37 -38.6 -172 -39 29.0 -2.3 -65 -39.1 169 -39.4 30.0 -1.8 -90 -36.3 143 -37.2 31.0 -1.6 -115 -35 111 -34.7 32.0 -1.5 -135 -37.5 50 -36.7 33.0 -1.5 -154 -39.5 33. -39.5 34.0 -1.1 -171 -42 18. -40.5 35.0 -1 174 -52.6 34. -51.9 36.0 -1 156 -42.5 56 -44.3 37.0 -0.8 141 -44.1 19 -45.3 38.0 -0.9 131 -46.4 9 -43 39.0 -0.8 117 -41.4 14 -42.3 40.0 -0.5 98 -39 -54 -38.9 See paragraph “Definition of the Sij reference planes” Ref. : DSCHA4861-QGG2262 - 18 Sep 12 4/14 PhS21 (°) 146 -177 1 128 -17 -163 77 30 -150 93 -84 153 60 -34 -177 95 21 -36 -78 -76 -84 -77 -76 -118 -144 -130 -170 167 144 109 56 38 7 -10 38 12 -27 0 -59 S22 (dB) -1.3 -1.9 -3.6 -12.2 -20.5 -18.4 -18.9 -15 -11.9 -13.3 -15.5 -17.2 -15.9 -14.9 -14.1 -13 -12.2 -11.8 -11.9 -12.4 -13.4 -14.6 -14 -11.4 -8.6 -6.6 -5 -4 -3.3 -2.9 -2.6 -2.4 -1.9 -1.8 -1.6 -1.2 -0.3 -0.3 -0.2 PhS22 (°) 96 43 -27 -60 -136 -99 -133 -157 140 76 2 -36 -69 -96 -164 177 156 134 109 -100 -134 -179 125 75 36 2 -27 -54 -80 -105 -125 -145 -162 -180 165 152 138 125 106 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4861-QGG 6-11 GHz Variable Gain Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +4.5V, Id = 160mA These measurements are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Board losses are de-embedded. Linear Gain versus Frequency & Gain Control Voltage 30 25 20 Gain (dB) 15 10 5 0 -5 -10 -1.5V -0.8V -0.6V -0.4V -0.2V 0V -15 4 5 6 7 8 9 10 11 12 13 14 Frequency (GHz) Linear Gain versus Gain Control Voltage & frequency 26 24 22 20 18 16 Gain (dB) 14 12 10 8 6 4 2 6 GHz 8.5 GHz 11 GHz 0 -2 -4 -1,5 -1,3 -1,1 -0,9 -0,7 -0,5 -0,3 -0,1 Control voltage (V) Ref. : DSCHA4861-QGG2262 - 18 Sep 12 5/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4861-QGG 6-11 GHz Variable Gain Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +4.5V, Id = 160mA Input return loss at min. & max. gain 0 -5 Input retun loss (dB) -10 -15 -20 S11 at minimum attenuation -25 S11 at maximum attenuation -30 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 18 19 20 Frequency (GHz) Output return loss at min & max gain 0 Output return loss (dB) -5 -10 -15 -20 S22 at minimum attenuation -25 S22 at maximum attenuation -30 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Frequency (GHz) Ref. : DSCHA4861-QGG2262 - 18 Sep 12 6/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4861-QGG 6-11 GHz Variable Gain Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +4.5V, Id = 160mA Output IP3 versus Output power & frequency at maximum gain (Gc1=Gc2= -1.5V) 40 38 36 34 OIP3 (dBm) 32 30 28 26 24 6 GHz 7 GHz 8 GHz 22 9 GHz 10 GHz 11 GHz 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Output Power DCL (dBm) Output IP3 at 9GHz versus Output power & gain control 40 38 36 34 OIP3 (dBm) 32 30 28 26 24 Gc = -1.5V Gc = -0.7V 22 Gc = -0.5V Gc = 0V Gc = -0.6V 20 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Power DCL (dBm) Ref. : DSCHA4861-QGG2262 - 18 Sep 12 7/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4861-QGG 6-11 GHz Variable Gain Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +4.5V, Id = 160mA Output power at 1dB compression versus Frequency & gain control 28 27 26 P1dB (dBm) 25 24 23 22 21 20 -1.5V -0.6V -0.5V 19 18 5 6 7 8 9 10 11 12 Freq (GHz) Output power at 1dB compression versus Frequency & temperature at max gain 28 27 26 P1dB (dBm) 25 24 23 22 21 20 -40°C +25°C +85°C 19 18 5 6 7 8 9 10 11 12 Freq (GHz) Ref. : DSCHA4861-QGG2262 - 18 Sep 12 8/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4861-QGG 6-11 GHz Variable Gain Amplifier Typical Board Measurements Tamb.= +25°C, Vd = +4.5V, Id = 160mA Output IP3 versus Output power & temperature at 9GHz and maximum gain 40 38 36 34 OIP3 (dBm) 32 30 28 26 24 -40°C +25°C +85°C 22 20 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Output Power DCL (dBm) Maximum & minimum gain versus Frequency & temperature 30 25 Gain min & max (dB) 20 15 10 5 0 -5 -40°C 25°C +85°C -10 4 5 6 7 8 9 10 11 12 13 14 Frequency (GHz) Ref. : DSCHA4861-QGG2262 - 18 Sep 12 9/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4861-QGG 6-11 GHz Variable Gain Amplifier Package outline (1) Matt tin, Lead Free Units : From the standard : (Green) mm JEDEC MO-220 (VGGD) 29- GND 12345678910- Gnd(2) RF IN Gnd(2) Gnd(2) Nc Gnd(2) Gnd(2) Gnd(2) GC1 VG12 11121314151617181920- GC2 VG3 Nc Nc Gnd(2) Gnd(2) Nc Gnd(2) Gnd(2) RF OUT 2122232425262728- Gnd(2) Nc Nc VD Nc Gnd(2) Nc Nc (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN0017 (http://www.ums-gaas.com) for exact package dimensions. (2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : DSCHA4861-QGG2262 - 18 Sep 12 10/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4861-QGG 6-11 GHz Variable Gain Amplifier Definition of the Sij reference planes The reference planes used for Sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). The input and output reference planes are located at 3.66mm offset (input wise and output wise respectively) from this axis. Then, the given Sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "Evaluation mother board". Notes Due to ESD protection circuits on RF input and output, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. ESD protections are also implemented on gate and control accesses. The DC connections do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external DC decoupling (10nF) on the PC board, as close as possible to the package. Ref. : DSCHA4861-QGG2262 - 18 Sep 12 11/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4861-QGG 6-11 GHz Variable Gain Amplifier Evaluation mother board ■ Compatible with the proposed footprint. ■ Based on typically Ro4003 / 8mils or equivalent. ■ Using a micro-strip to coplanar transition to access the package. ■ Recommended for the implementation of this product on a module board. ■ Decoupling capacitors of 10nF ±10% are recommended for all DC accesses. ■ See application note AN0017 for details. Ref. : DSCHA4861-QGG2262 - 18 Sep 12 12/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4861-QGG 6-11 GHz Variable Gain Amplifier DC Schematic 4.5V, 160mA Ref. : DSCHA4861-QGG2262 - 18 Sep 12 13/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA4861-QGG 6-11 GHz Variable Gain Amplifier Recommended package footprint Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot print recommendations. SMD mounting procedure For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information QFN 5x5 package: CHA4861-QGG/XY Stick: XY = 20 Tape & reel: XY = 21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA4861-QGG2262 - 18 Sep 12 14/14 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34