CHA6005-99F 8-12GHz High Power Amplifier GaAs Monolithic Microwave IC Description Linear Gain (dB) & Pout @ ~ 3dBcomp Main Features ■ High power : 32.5dBm ■ High PAE : 38% ■ Frequency band : 8-12GHz ■ Linear gain : 22dB ■ DC bias: Vd=8Volt@Id=350mA ■ Chip size 3x1.5x0.1mm 34 600 32 550 30 500 28 450 Linear Gain (dB) Pout @ Pin=14 dBm (3dBcomp) Idrain @ Pin=14 dBm (3dBcomp) 26 400 24 350 22 300 20 250 18 Idrain @ ~ 3dBcomp (mA) The CHA6005-99F is a high power amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 200 8 8.5 9 9.5 10 10.5 11 11.5 12 Freq (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range G Linear Gain P1dB Output Power @ 3dB comp. PAE Power Added Efficiency @ 3dB comp. Ref. : DSCHA60052244 - 31 Aug 12 1/10 Min 8 Typ Max 12 22 31.5 38 Unit GHz dB dBm % Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier Electrical Characteristics Tamb.= +25°C, Vd = +8V Symbol Parameter Min Typ Max Unit Freq Operating frequency 8 12 GHz G Small signal gain 22 dB dBS11 Input Return Loss 13 dB dBS22 Output Return Loss 10 dB P1dB Output power @ 1dBcomp 31.5 dBm P3dB Output power @ 3dBcomp 32.5 dBm PAE Power Added Efficiency @ 3dBcomp 39 % Id_3dBc Supply drain current @ 3dBcomp 500 mA Vd1, 2 Drain supply voltage 8 V Id Supply quiescent current 350 mA Vg Gate supply voltage -1 V These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. A bonding wire of typically 0.25 to 0.3nH will improve the matching at the accesses. Ref. : DSCHA60052244 - 31 Aug 12 2/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 9.0 V Id Drain bias current 550 mA Vg Gate bias voltage -0.6 V (2) Pin Maximum peak input power overdrive +20 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Typical Bias Conditions Tamb.= +25°C Symbol Pad No V1 V1 V2 V2 Parameter Drain supply voltage Gaye supply voltage Ref. : DSCHA60052244 - 31 Aug 12 3/10 Values 8 -1 Unit V V Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier Typical on-wafer Sij parameters Tamb.= +25°C, Vd = +8V, Id = 350mA Freq (GHz) S11 (dB) PhS11 (°) S12 (dB) PhS12 (°) S21 (dB) PhS21 (°) S22 (dB) PhS22 (°) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 -0.13 -0.41 -0.91 -1.58 -2.38 -2.84 -3.31 -3.93 -4.31 -4.83 -5.46 -6.62 -8.19 -9.90 -11.75 -14.25 -22.50 -19.68 -11.97 -9.48 -9.03 -8.28 -7.24 -6.28 -4.14 -2.77 -2.03 -1.55 -1.57 -1.81 -1.92 -2.40 -1.78 -2.71 -4.54 -24.56 -36.99 -49.02 -59.45 -68.02 -74.73 -82.38 -90.68 -97.82 -106.35 -116.08 -124.18 -132.30 -137.14 -139.76 -147.90 -149.89 -36.57 -46.88 -66.85 -76.06 -75.50 -77.36 -73.12 -77.38 -86.29 -97.24 -108.80 -118.06 -127.31 -138.32 -143.30 -155.35 -171.55 169.63 -41.65 -73.73 -69.95 -63.20 -56.66 -63.04 -57.85 -60.34 -60.03 -50.57 -70.50 -55.54 -53.46 -55.00 -57.16 -51.44 -61.08 -61.46 -49.78 -54.09 -45.08 -45.12 -46.53 -50.56 -45.11 -40.75 -43.07 -46.25 -61.73 -40.65 -51.69 -37.13 -53.00 -30.56 -37.57 94.28 -169.07 74.68 3.88 157.15 94.69 -114.80 158.64 24.56 -80.01 131.94 -157.24 -7.29 -29.83 -149.65 49.02 68.48 37.28 -37.51 43.84 -123.49 -167.53 178.36 143.28 -73.10 -41.28 39.37 -168.74 -65.61 56.06 -38.56 17.09 -31.01 -18.51 -134.74 -41.00 -33.87 -23.74 -18.60 -10.90 -6.27 -3.73 -1.35 1.15 4.11 7.63 11.36 15.47 19.90 22.91 23.09 22.44 22.18 22.25 22.31 22.21 22.20 21.59 17.68 10.97 3.20 -4.83 -12.75 -20.85 -28.30 -36.54 -40.98 -52.02 -34.16 -41.04 5.33 124.41 83.31 78.66 48.69 4.33 -33.50 -66.01 -94.43 -123.24 -154.66 170.68 129.40 79.16 14.32 -50.26 -104.62 -154.83 154.10 99.85 43.81 -18.84 -93.01 -177.82 108.88 49.97 -0.77 -42.90 -80.03 -106.29 -126.10 170.77 96.09 104.30 -142.48 -0.14 -0.25 -0.36 -0.45 -0.33 -0.30 -0.46 -0.48 -1.12 -1.84 -2.81 -4.14 -6.12 -7.72 -8.43 -10.58 -12.35 -11.34 -10.95 -11.30 -12.08 -14.05 -19.54 -16.12 -11.80 -10.40 -8.93 -7.39 -6.32 -5.11 -4.24 -5.04 -3.40 -2.95 -3.18 -31.59 -46.43 -60.62 -76.49 -92.84 -108.37 -125.86 -144.00 -163.74 175.57 149.75 117.44 71.13 6.74 -68.64 -110.20 -122.40 -131.10 -144.80 -158.95 -174.53 168.12 110.78 -41.18 -75.70 -90.23 -101.41 -116.10 -123.79 -131.17 -145.42 -150.20 -156.88 -165.99 -173.70 Ref. : DSCHA60052244 - 31 Aug 12 4/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier Typical on Test Fixture Measurements Tamb.= +25°C, Vd = 8V, Id (Quiescent) = 350mA, Drain Pulse width = 25µs, Duty cycle = 10% Linear Gain versus Frequency 25 Linear Gain (dB) 23 21 19 17 15 8 8.5 9 9.5 10 10.5 11 11.5 12 Freq (GHz) Output Power @ 1&3dBcomp versus Frequency 36 Pout @ ~ 1 & 3dBcomp 35 34 33 32 31 30 Pout @ Pin=11 dBm (1dBcomp) 29 Pout @ Pin=14 dBm (3dBcomp) 28 8 8.5 9 9.5 10 10.5 11 11.5 12 Freq (GHz) Ref. : DSCHA60052244 - 31 Aug 12 5/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier Typical Test Fixture Measurements Tamb.= +25°C, Vd = 8V, Id (Quiescent) = 350mA, Drain Pulse width = 25µs, Duty cycle = 10% Power added efficiency @ 1 & 3dBcomp versus Frequency 44 43 PAE (%) @ ~ 1 & 3dBcomp 42 41 40 39 38 37 36 35 34 PAE (%) @ Pin=11 dBm (1dBcomp) 33 PAE (%) @ Pin=14 dBm (3dBcomp) 32 31 30 8 8.5 9 9.5 10 10.5 11 11.5 12 Freq (GHz) Drain current @ 1 & 3dBcomp versus Frequency 800 IDrain (mA) @ ~ 1 & 3dBcomp 700 600 500 400 300 Idrain @ Pin=14 dBm (3dBcomp) 200 Idrain @ Pin=11 dBm (1dBcomp) 100 0 8 8.5 9 9.5 10 10.5 11 11.5 12 Freq (GHz) Ref. : DSCHA60052244 - 31 Aug 12 6/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier Mechanical data Chip thickness: 70µm ±10µm. Chip size: 3000 x 1500 ±35µm All dimensions are in micrometers RF pads (1, 10) = 122 x 100µm² DC pads (4, 6, 7, 8, 9) = 100 x 100µm² Pin number 1 2, 3, 5,8 4 6 7 8 9 10 Ref. : DSCHA60052244 - 31 Aug 12 Pin name IN VG1 VD1 VG2 GND VD2 OUT Description Input RF Not Connected Vg1 Vd1 Not Connected Not Connected Vd2 Output RF 7/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier Recommended assembly plan 25µm wedge bonding is preferred Note: Equivalent RF Wire Bonding: 0.25nH (typical length of 200µm for a 25µm diameter wire). Recommended circuit bonding table Port IN OUT Connection External capacitor Inductance (Lbonding) = 0.3nH 400µm length with a wire diameter of 25 µm Inductance (Lbonding) = 0.3nH 400µm length with a wire diameter of 25 µm VG Inductance 1nH C1 ~ 120pF, C2 ~ 10nF VD Inductance 1nH C1 ~ 120pF Ref. : DSCHA60052244 - 31 Aug 12 8/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier DC Schematic Medium Power Amplifier: 8V, 350mA Ref. : DSCHA60052244 - 31 Aug 12 9/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-99F 8-12GHz High Power Amplifier Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Ordering Information Chip form: CHA6005-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA60052244 - 31 Aug 12 10/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34