CHR2299-99F RoHS COMPLIANT 40-44GHz Down converter Description The CHR2299-99F is a down converter multifunction chip, which integrates LO X4 multiplier, a balanced cold FET mixer and a RF LNA. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a power pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. IF_I X4 IF_Q Conversion Gain (dB) ■ 40-44GHz RF bandwidth ■ 21dB conversion gain ■ x4 LO frequency multiplier ■ x4 LO output port ■ > 12dB image rejection ■ DC bias: Vd = 4V @ Id = 240mA ■ Chip size 3.97x2.25x0.1mm 30 28 26 24 22 20 18 16 14 12 10 supradyne 39 40 41 42 DA DX GX G3 GM RF_IN It is available in chip form. Main Features LO_IN 4LO_OUT GaAs Monolithic Microwave IC infradyne 43 44 45 RF_frequency (GHz) Main Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit F_RF RF frequency range 40 44 GHz F_LO LO frequency range 9.5 11.5 GHz F_IF IF frequency range DC 2.0 GHz Gc Conversion gain Ref. : DSCHR22992012 - 19 Jan 12 21 1/12 dB Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR2299-99F 40-44GHz Down converter Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit F_RF RF frequency range 40 44 GHz F_LO LO frequency range 9.5 11.5 GHz F_IF IF frequency range DC 2.0 GHz Gc Conversion gain 21 dB Im rej Image rejection 12 dB P_LO LO Input power 0 dBm Noise figure for IF>0.1GHz 4.5 dB Intermodulation level at Pin2tones = -30dBm 45 dBc RL_RF RF Return Loss 6 dB RL_LO LO Return Loss 12 dB P_4FLO Output power at 4LO_OUT port -1 dBm 4xFLO leakage on RF port -38 dBm 4 V NF IMD3 4xFLO_Lk DX, DA LO multiplier, buffer and LNA biasing GM Mixer gate biasing -0.6 V G3 LO buffer gate biasing -0.3 V GX Multiplier gate biasing -1.2 V IdT Total biasing current 240 mA Electrostatic discharge sensitive device observe handling precautions! These values are representative of chip on board measurements with a 90° hybrid coupler. Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values DX, DA LO multiplier, buffer and LNA biasing 4.5 IdT Total biasing current 300 GM, G3, GX Gate bias voltage -2; +0.6 P_LO Maximum peak input LO power overdrive (2) 10 (2) Pin_RF Maximum peak input RF power overdrive -5 Tj Junction temperature 175 Ta Operating temperature range -40 to +85 Tstg Storage temperature range -55 to +155 RTh Thermal resistance, Tback side = +85 °C, Ptotal = 0.96 W 80 (1) (2) Unit V mA V dBm dBm °C °C °C °C/W Operation of this device above anyone of these parameters may cause permanent damage Duration < 1s Ref. : DSCHR22992012 - 19 Jan 12 2/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR2299-99F 40-44GHz Down converter Typical chip on board Measurements in Temperature DX= DA = 4V, GM = -0.6V, G3 = -0.3V, GX = -1.2V, P_LO = 0dBm These values are representative of onboard measurements as defined on the section ”Evaluation mother board”. The losses are de-embedded. Conversion Gain versus RF frequency & temperature RF = 4LO-IF; IF = 1GHz 30 Conversion Gain (dB) 28 26 24 22 20 18 16 14 -40 °C 12 +25 °C +85 °C 10 39 40 41 42 43 44 45 RF_frequency (GHz) Conversion Gain versus RF frequency & temperature RF = 4LO+IF; IF = 1GHz 30 Conversion Gain (dB) 28 26 24 22 20 18 16 14 -40 °C 12 +25 °C +85 °C 10 39 40 41 42 43 44 45 RF_frequency (GHz) Ref. : DSCHR22992012 - 19 Jan 12 3/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR2299-99F 40-44GHz Down converter Typical chip on board Measurements in Temperature Conversion Gain versus RF frequency & temperature RF = 4LO+/-IF; IF = 3.5GHz Conversion Gain versus RF frequency & temperature RF = 4LO+IF; IF = 6GHz 30 28 Conversion Gain (dB) 26 24 22 20 18 16 14 12 -40 °C +25 °C +85 °C 10 39 40 41 42 43 44 45 RF_frequency (GHz) Ref. : DSCHR22992012 - 19 Jan 12 4/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR2299-99F 40-44GHz Down converter Typical chip on board Measurements in Temperature Image rejection versus RF frequency & temperature RF = 4LO+/-IF; IF = 2GHz 30 -40 °C; sup inf +25 °C; sup inf +85 °C; sup inf Image Rejection (dB) 25 20 15 10 5 39 40 41 42 43 44 45 RF_frequency (GHz) Image rejection versus RF frequency & temperature RF = 4LO+IF; IF = 6GHz Image Rejection (dB) 50 45 40 35 -40 °C +25 °C +85 °C 30 39 40 41 42 43 44 45 RF_frequency (GHz) Ref. : DSCHR22992012 - 19 Jan 12 5/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR2299-99F 40-44GHz Down converter Typical chip on board Measurements IMD3 versus RF frequency & Input power Supradyne: IF = 2GHz 100 100 90 90 80 80 70 70 IMD3 (dB) IMD3 (dB) Infradyne: IF = 2GHz 60 50 60 50 40 40 30 38.5 GHz 42.5 GHz 20 -40 -35 30 40.5 GHz 44.5 GHz -30 40.5 GHz 42.5 GHz 44.5 GHz 20 -25 -40 -20 -35 -30 -25 -20 Input power 2tones (dBm) Input power 2tones (dBm) Input IP3 versus Temperature & Input power Supradyne: RF = 40.5GHz; IF = 3.5GHz 10 10 8 8 6 6 4 4 Input IP3 (dBm) Input IP3 (dBm) Supradyne: RF = 40.5GHz; IF = 2GHz 2 0 -2 -4 2 0 -2 -4 -6 -6 -8 -40 °C +25 °C -8 +85 °C -40 °C +25 °C +85 °C -10 -10 -40 -35 -30 -25 -20 -40 -35 Ref. : DSCHR22992012 - 19 Jan 12 -30 -25 -20 Input power 2tones (dBm) Input power 2tones (dBm) 6/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR2299-99F 40-44GHz Down converter Typical chip on board Measurements LO harmonics Power level on RF port -30 -35 n*LO power (dBm) -40 -45 -50 -55 -60 -65 -70 P_LO -75 P_2LO P_4LO -80 8 9 10 11 12 13 14 LO Frequency (GHz) RF & LO return loss (in the connectors plan) 0 Return loss (dB) -5 -10 -15 -20 -25 LO return loss RF return loss -30 0 5 10 15 20 25 30 35 40 45 50 Frequency (GHz) Ref. : DSCHR22992012 - 19 Jan 12 7/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR2299-99F 40-44GHz Down converter Mechanical data Chip thickness: 100 µm, units: µm, tol:+/- 35 µm DC pads = 92x92 µm, RF pads = 178x114 µm Pin number 1 2 3 4 5 6 7, 8 9 10 Pin name RF_IN DA DX GX G3 GM IF_I & IF_Q 4LO_OUT LO_IN Description RF input LNA drain voltage Multiplier & Buffer drain voltage Multiplier gate voltage LO buffer gate voltage Mixer gate voltage IF outputs Output 4xLO frequency LO input Recommended biasing Pin Name GM G3 GX DX DA Pin Number 6 5 4 3 2 Ref. : DSCHR22992012 - 19 Jan 12 Parameter Mixer gate voltage LO buffer gate voltage X4 gate voltage X4 and buffer drain voltage LNA Drain voltage 8/12 Nominal value -0.6 V -0.3 V -1.2 V 4V 4V Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR2299-99F 40-44GHz Down converter Chip assembly Optionnal 4LO output LO input RF input IF_I & IF_Q to 90° hybrid coupler Capacitors 120pF DC Suply Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Ref. : DSCHR22992012 - 19 Jan 12 9/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR2299-99F 40-44GHz Down converter Evaluation mother board Based on typically Ro4003 / 8 mils or equivalent. Decoupling capacitors of 10nF 10% and chip 120pF 10% 90° hybrid coupler: 1-2GHz or 2-4GHz Ref. : DSCHR22992012 - 19 Jan 12 10/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR2299-99F 40-44GHz Down converter DC Schematic LO multiplier and buffers: 4V, 105mA DX IF I LO out 20 50 70 40 500 50 2 k 30 mA 11.3 15 mA 30 mA 30 mA 11.3 LO 112 150 20 IF Q 500 200 200 200 500 LO amplifier X2 multiplier X2 multiplier GX Mixer GM 4LO amplifier G3 LNA: 4V, 140mA DA 6 3.7 k 3 3.44 k 16 100 17 mA RF 160 Ref. : DSCHR22992012 - 19 Jan 12 50 3 3.44 k 23 34 mA 450 25 11/12 2 3.42 k 100 34 mA 450 25 54 mA 450 16 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR2299-99F 40-44GHz Down converter Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Ordering Information Chip form: CHR2299-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHR22992012 - 19 Jan 12 12/12 Specifications subject to change without notice Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34