WHXPCB AO4448

万和兴电子有限公司 www.whxpcb.com
AO4448
80V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AO4448 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
VDS
ID (at VGS=10V)
80V
10A
RDS(ON) (at VGS=10V)
< 16mΩ
RDS(ON) (at VGS = 7V)
< 20mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current
TA=25°C
Units
V
±25
V
10
ID
TA=70°C
Maximum
80
8
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAS, IAR
45
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
101
mJ
Power Dissipation B
Junction and Storage Temperature Range
Rev 1: Nov 2010
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
70
Steady-State
Steady-State
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
2
RθJA
RθJL
Typ
31
59
16
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°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4448
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Min
Conditions
ID=250µA, VGS=0V
Typ
80
10
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
2.8
ID(ON)
On state drain current
VGS=10V, VDS=5V
70
TJ=55°C
50
100
VGS=10V, ID=10A
3.3
23.5
28.5
VGS=7V, ID=8A
15.4
20
mΩ
VDS=5V, ID=10A
23
1
V
4
A
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Rg
Gate resistance
Gate Source Charge
Qgd
Gate Drain Charge
mΩ
S
1335
1670
2005
pF
150
215
280
pF
40
72
100
pF
VGS=0V, VDS=0V, f=1MHz
0.35
0.75
1.2
Ω
22
28
34
nC
VGS=10V, VDS=40V, ID=10A
8.8
11
13
nC
5
8
11
nC
VGS=0V, VDS=40V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
V
16
gFS
Output Capacitance
nA
13
Static Drain-Source On-Resistance
Reverse Transfer Capacitance
4.2
µA
A
RDS(ON)
Coss
Units
V
VDS=80V, VGS=0V
IDSS
Crss
Max
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs
14.5
21
27.5
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
45.5
65
85
VGS=10V, VDS=40V, RL=4Ω,
RGEN=3Ω
12
ns
9
ns
20
ns
8
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Nov. 2010
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Page 2 of 6
AO4448
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
7.5V
10V
60
60
8V
6.5V
ID(A)
ID (A)
VDS=5V
7V
40
6V
20
40
20
125°C
25°C
VGS=5.5V
0
0
1
2
3
0
4
2
5
3
5
6
7
8
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
18
2.2
Normalized On-Resistance
VGS=7V
16
RDS(ON) (mΩ )
4
14
12
10
VGS=10V
2
VGS=10V
ID=10A
1.8
1.6
1.4
1.2
VGS=7V
ID=8A
1
17
5
2
10
0.8
8
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
30
1.0E+02
ID=10A
1.0E+01
25
40
125°C
20
IS (A)
RDS(ON) (mΩ )
1.0E+00
125°C
1.0E-01
25°C
1.0E-02
15
1.0E-03
10
1.0E-04
25°C
1.0E-05
5
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Nov. 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4448
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
10
VDS=40V
ID=10A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
2
1600
1200
800
Coss
400
Crss
0
0
0
5
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10
0
30
10
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
60
100.0
TA=25°C
TA=100°C
TA=150°C
10.0
TA=125°C
10µs
RDS(ON)
limited
10.0
ID (Amps)
IAR (A) Peak Avalanche Current
Ciss
100µs
1.0
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s
DC
0.0
1.0
0.01
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 9: Single Pulse Avalanche capability (Note
C)
0.1
1
10
VDS (Volts)
100
1000
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 1: Nov. 2010
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AO4448
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
12
120
Irm
25
3
di/dt=800A/µs
10
125ºC
125ºC
20
2
8
25ºC
100
6
125ºC
90
15
trr
trr (ns)
110
25ºC
1.5
10
1
4
25ºC
80
Qrr
70
5
2
25ºC
S
0.5
125ºC
0
0
0
5
10
15
20
25
0
0
30
14
125ºC
80
12
30
10
25
8
Qrr
40
125ºC
Irm (A)
25ºC
60
25ºC
4
30
Is=20A
125ºC
2
40
1.5
25ºC
20
trr
15
1
25ºC
S
0.5
5
125ºC
0
2
200
400
600
800
1000
0
0
0
di/dt (A/µ
µs)
Figure 15: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 1: Nov. 2010
25
6
Irm
0
20
2.5
10
20
15
35
trr (ns)
Is=20A
10
IS (A)
Figure 14: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
IS (A)
Figure 13: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
100
5
S
60
Qrr (nC)
2.5
S
130
di/dt=800A/µs
Irm (A)
Qrr (nC)
140
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200
400
600
800
1000
di/dt (A/µ
µs)
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 5 of 6
AO4448
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Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: Nov. 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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