万和兴电子有限公司 www.whxpcb.com AO4448 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AO4448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 80V 10A RDS(ON) (at VGS=10V) < 16mΩ RDS(ON) (at VGS = 7V) < 20mΩ 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current TA=25°C Units V ±25 V 10 ID TA=70°C Maximum 80 8 A Pulsed Drain Current C IDM Avalanche Current C IAS, IAR 45 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 101 mJ Power Dissipation B Junction and Storage Temperature Range Rev 1: Nov 2010 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 70 Steady-State Steady-State -55 to 150 TJ, TSTG Symbol t ≤ 10s W 2 RθJA RθJL Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4448 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Min Conditions ID=250µA, VGS=0V Typ 80 10 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.8 ID(ON) On state drain current VGS=10V, VDS=5V 70 TJ=55°C 50 100 VGS=10V, ID=10A 3.3 23.5 28.5 VGS=7V, ID=8A 15.4 20 mΩ VDS=5V, ID=10A 23 1 V 4 A Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge mΩ S 1335 1670 2005 pF 150 215 280 pF 40 72 100 pF VGS=0V, VDS=0V, f=1MHz 0.35 0.75 1.2 Ω 22 28 34 nC VGS=10V, VDS=40V, ID=10A 8.8 11 13 nC 5 8 11 nC VGS=0V, VDS=40V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs V 16 gFS Output Capacitance nA 13 Static Drain-Source On-Resistance Reverse Transfer Capacitance 4.2 µA A RDS(ON) Coss Units V VDS=80V, VGS=0V IDSS Crss Max tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 14.5 21 27.5 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 45.5 65 85 VGS=10V, VDS=40V, RL=4Ω, RGEN=3Ω 12 ns 9 ns 20 ns 8 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Nov. 2010 www.aosmd.com Page 2 of 6 AO4448 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 7.5V 10V 60 60 8V 6.5V ID(A) ID (A) VDS=5V 7V 40 6V 20 40 20 125°C 25°C VGS=5.5V 0 0 1 2 3 0 4 2 5 3 5 6 7 8 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 18 2.2 Normalized On-Resistance VGS=7V 16 RDS(ON) (mΩ ) 4 14 12 10 VGS=10V 2 VGS=10V ID=10A 1.8 1.6 1.4 1.2 VGS=7V ID=8A 1 17 5 2 10 0.8 8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 30 1.0E+02 ID=10A 1.0E+01 25 40 125°C 20 IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 1.0E-01 25°C 1.0E-02 15 1.0E-03 10 1.0E-04 25°C 1.0E-05 5 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: Nov. 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4448 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=40V ID=10A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 1600 1200 800 Coss 400 Crss 0 0 0 5 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10 0 30 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 100.0 TA=25°C TA=100°C TA=150°C 10.0 TA=125°C 10µs RDS(ON) limited 10.0 ID (Amps) IAR (A) Peak Avalanche Current Ciss 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 10s DC 0.0 1.0 0.01 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 10 VDS (Volts) 100 1000 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 1: Nov. 2010 www.aosmd.com Page 4 of 6 AO4448 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 12 120 Irm 25 3 di/dt=800A/µs 10 125ºC 125ºC 20 2 8 25ºC 100 6 125ºC 90 15 trr trr (ns) 110 25ºC 1.5 10 1 4 25ºC 80 Qrr 70 5 2 25ºC S 0.5 125ºC 0 0 0 5 10 15 20 25 0 0 30 14 125ºC 80 12 30 10 25 8 Qrr 40 125ºC Irm (A) 25ºC 60 25ºC 4 30 Is=20A 125ºC 2 40 1.5 25ºC 20 trr 15 1 25ºC S 0.5 5 125ºC 0 2 200 400 600 800 1000 0 0 0 di/dt (A/µ µs) Figure 15: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 1: Nov. 2010 25 6 Irm 0 20 2.5 10 20 15 35 trr (ns) Is=20A 10 IS (A) Figure 14: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current IS (A) Figure 13: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 100 5 S 60 Qrr (nC) 2.5 S 130 di/dt=800A/µs Irm (A) Qrr (nC) 140 www.aosmd.com 200 400 600 800 1000 di/dt (A/µ µs) Figure 16: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 5 of 6 AO4448 万和兴电子有限公司 www.whxpcb.com Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: Nov. 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6