万和兴电子有限公司 www.whxpcb.com AO4468 30V N-Channel MOSFET General Description Product Summary The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) 30V 10.5A RDS(ON) (at VGS=10V) < 17mΩ RDS(ON) (at VGS = 4.5V) < 23mΩ VDS ESD Protected 100% UIS Tested 100% Rg Tested * RoHS and Halogen-Free Compliant SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C Units V ±20 V 10.5 ID TA=70°C Maximum 30 8.5 A IDM 50 Avalanche Current C IAS, IAR 19 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 18 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.7.0: July 2013 3.1 PD TA=70°C Steady-State Steady-State -55 to 150 TJ, TSTG Symbol t ≤ 10s W 2 RθJA RθJL www.aosmd.com Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4468 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C ±10 µA 1.8 2.4 V 14 17 20 24 VGS=4.5V, ID=9A 18 23 mΩ 36 1 V 4 A 740 888 pF 110 145 pF 82 115 pF 1.1 1.7 Ω VDS=0V, VGS=±16V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 50 VGS=10V, ID=10.5A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=10.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz A 0.75 DYNAMIC PARAMETERS Input Capacitance Ciss Rg µA 5 Gate-Body leakage current Output Capacitance Units V 1 IGSS Coss Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ 0.5 mΩ S SWITCHING PARAMETERS Qg(10V) Total Gate Charge 15 nC Qg(4.5V) Total Gate Charge 7.5 nC 2.5 nC 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=10.5A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10.5A, dI/dt=100A/µs 18 22 Qrr Body Diode Reverse Recovery Charge IF=10.5A, dI/dt=100A/µs 9 12 VGS=10V, VDS=15V, RL=1.45Ω, RGEN=3Ω 5 ns 3.5 ns 19 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.7.0: July 2013 www.aosmd.com Page 2 of 5 AO4468 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V 4V VDS=5V 3.5V 25 25 20 3V ID(A) ID (A) 20 15 15 10 10 5 5 125°C 25°C VGS=2.5V 0 0 0 1 2 3 4 1 5 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 25 1.8 Normalized On-Resistance RDS(ON) (mΩ Ω) 2 VGS=4.5V 20 15 VGS=10V 10 1.6 VGS=4.5V ID=9A 1.4 1.2 VGS=10V ID=10.5A 17 5 2 10 1 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 40 1.0E+02 ID=10.5A 1.0E+01 35 40 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 30 125°C 25 20 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 15 1.0E-04 25°C 1.0E-05 10 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.7.0: July 2013 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4468 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=10.5A 1000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 800 600 400 Coss 200 0 Crss 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 1000.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 TA=25°C 100.0 1000 RDS(ON) limited 10.0 Power (W) ID (Amps) 10µs 100µs 1ms 1.0 100 10ms 10 TJ(Max)=150°C TA=25°C 0.1 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.7.0: July 2013 www.aosmd.com Page 4 of 5 AO4468 万和兴电子有限公司 www.whxpcb.com Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.7.0: July 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5