WILLAS FM120-M+ 9014xLT1 THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H NPN Silicon surface mounted application in order to • Low profile optimize board space. • Low power loss, high efficiency. FEATURE • High current capability, low forward voltage drop. • High surge capability. ƽComplementary to 9015. • Guardring for overvoltage protection. ƽ• We declare that the material of product compliance with RoHS requirements. Ultra high-speed switching. Pb-Free package is chip, metal silicon junction. • Silicon epitaxial planaravailable Lead-free partsfor meet environmental standards of • RoHS product packing code suffix ”G” 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Halogen free product for packing code suffix “H” • RoHS product for packing code suffix "G" SOT– 23 Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant DEVICE MARKING AND ORDERING INFORMATION • Case : Molded plastic, SOD-123H Device :Plated terminals, Marking Shipping , • Terminals solderable per MIL-STD-750 9014QLT1 Method 2026 14Q 0.031(0.8) Typ. 3 3000/Tape&Reel • Polarity : Indicated by cathode band 9014RLT1 14R • Mounting Position : Any 9014SLT1 14S • Weight : Approximated 0.011 gram 9014TLT1 COLLECTOR 0.031(0.8) Typ. Dimensions in inches and (millimeters) 1 3000/Tape&Reel BASE 2 EMITTER 3000/Tape&Reel 14T 3000/Tape&Reel MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. SingleMAXIMUM phase half wave,RATINGS 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Rating SYMBOLValue FM120-MH FM130-MH Symbol UnitFM140-MH FM150-MH FM160-MH Marking Code VRRM 13 V 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Collector-Base Maximum RMS Voltage Voltage VCBO VRMS 5014 21 V 28 35 42 56 70 105 140 Maximum DC Blocking Voltage Emitter-Base Voltage VEBO VDC 520 30 V 40 50 60 80 100 150 200 Collector-Emitter Voltage Maximum Recurrent Peak Reverse Voltage Maximum Average Forward Rectified Current Collector current-continuoun VCEO IO IC IFSM Peak Forward Surge Current 8.3 ms single half sine-wave THERMAL CHARATEERISTICS superimposed on rated load (JEDEC method) 100 CJ Typical Junction Capacitance (Note 1) Characteristic Total Device Dissipation FR-5 Board, (1) TJ Operating Temperature Range Storage Temperature Range TSTG o Symbol PD TA=25 C CHARACTERISTICS o -55 to +125 Rated DC Blocking Voltage Total Device Dissipation @T A=125℃ IR 0.50 R©JA Unit -55 to +150 mW 556 mW/ C o 0.70 C/W Substrate, (2) TA=25 oC Derate above 25oC 2- Thermal Resistance From Junction to Ambient 0.85 0.9 0.92 0.5 10 PD 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 300 mW 2.4 mW/oC Thermal Resistance, Junction to Ambient R©JA 417 Junction and Storage Temperature TJ ,Tstg -55 to +150 2012-06 40 120 - 65 to +175 1.8 VF Thermal Junction Ambient Maximum AverageResistance, Reverse Current at @Tto A=25℃ 2012- Max FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH o Maximum Forward Voltage at 1.0A DC NOTES:Alumina mA 225 Derate above 25 C 1.0 30 RΘJA Typical Thermal Resistance (Note 2) FM180-MH FM1100-MH FM1150-MH FM1200-MH 12 45 20 o C/W o C WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 9014xLT1 THRU FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H to • Low profile surface mounted application in order o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) optimize board space. • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. OFF CHARACTERISTICS • High surge capability. for overvoltage protection. • GuardringCharacteristic Symbol • Ultra high-speed switching. Collector-Emitter Voltage V(BR)CEO epitaxial planar chip, metal silicon junction. • SiliconBreakdown Lead-free parts meet environmental standards of • (I =1.0mA) C 0.012(0.3) Typ. Min Typ Max Unit 45 - - V V(BR)EBO 5 - - V(BR)CBO 50 - - 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 product for packing code suffix "G" • RoHS Emitter-Base Breakdown Voltage V Halogen free product for packing code suffix "H" (IE=100A) Mechanical data Collector-Base Breakdown : UL94-V0Voltage rated flame retardant • Epoxy • Case : Molded plastic, SOD-123H (IC=100A) • Terminals :Plated terminals, solderable per MIL-STD-750 I Collector Cutoff Current (V =40V) CB Emitter Cutoff Current (VEB=3V) • Polarity : Indicated by cathode band V 0.031(0.8) Typ. , - CBO Method 2026 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. - IEBO 100 nA 100 nA Dimensions in inches and (millimeters) • Mounting Position : Any • Weight : Approximated 0.011 gram ON CHARACTERISTICS DC Current Gain MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (IC=1mA, VCE Ratings at =5V) 25℃ ambient temperature unless otherwise specified.HFE 150 - 1000 - - 0.3 Single phase half wave, 60Hz, resistive of inductive load. Collector-Emitter Saturation Voltage For capacitive load, derate current by 20% (IC =100mA,IB=5mA) VCE RATINGS Marking Code VRRM R Maximum Recurrent Peak NOTE: * Reverse Voltage Q Maximum RMS Voltage HFE Maximum DC Blocking Voltage V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 150~300 VRMS 200~400 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) VDC Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 13 30 14 21 20 30 300~600 14 T40 15 50 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 400~1000 IO IFSM RΘJA Typical Thermal Resistance (Note 2) 12 20 S 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 9014xLT1 THRU FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. STATIC CHARACTERISTIC current capability, low forward voltage drop. • High • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. DC CURRENT GAIN 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) BASE-EMITTER SATURATION VOLTAGE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS CURRENT GAIN-BANDWIDTH PRODUCT COLLECTOR-EMITTER SATURATION VOLTAGE Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 9014xLT1 THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. .122(3.10) • Silicon epitaxial planar chip, metal silicon junction. .106(2.70) of • Lead-free parts meet environmental standards 0.012(0.3) Typ. .006(0.15)MIN. .063(1.60) .047(1.20) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" .110(2.80) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .083(2.10) Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any .080(2.04) • Weight : Approximated 0.011 gram .070(1.78) Dimensions in inches and (millimeters) .008(0.20) .003(0.08) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code RATINGS .004(0.10)MAX. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .020(0.50) IO .012(0.30) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 1.0 30 IFSM 40 120 RΘJA Dimensions in inches and (millimeters) Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) -55 to +125 TJ Operating Temperature Range Storage Temperature Range -55 to +150 - 65 to +175 TSTG CHARACTERISTICS FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.037 SYMBOL FM120-MH FM130-MH FM140-MH Maximum Forward Voltage at 1.0A DC 0.037 0.95 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage VF @T A=125℃ 0.500.95 0.70 0.85 0.9 0.92 0.5 IR 10 NOTES: 0.079 2.0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.035 0.9 0.031 0.8 2012-06 2012- inches mm WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.