WILLAS FM120-M+ BCX55 THRU BCX56 FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. TRANSISTOR (NPN) capability. • High surge • Guardring for overvoltage protection. • Ultra high-speed switching. FEATURES • Silicon epitaxial planar chip, metal silicon junction. z PNP• Lead-free Complements to BCX51,BCX52,BCX53 parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) 1. BASE MIL-STD-19500 /228 Low Voltage • RoHS product for packing code suffix "G" High Halogen Currentfree product for packing code suffix "H" Mechanical data Pb-Free package is available : UL94-V0 rated flame retardant • Epoxy RoHS product for packing code suffix ”G” Case : Molded plastic, SOD-123H • Halogen free product for packing code suffix “H” , • Terminals :Plated terminals, solderable per MIL-STD-750 z z z 0.012(0.3) Typ. SOT-89 2. COLLECTOR 3. EMITTER 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 APPLICATIONS • Polarity : Indicated by cathode band z Driver StagesPosition of Audio Amplifiers : Any • Mounting • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MARKING: BCX55:BE, BCX55-10:BG, BCX55-16BM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS BCX56:BH, BCX56-10:BK, BCX56-16:BL Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code VRRM Maximum Recurrent Peak Reverse Voltage 12 20 13 30 14 Maximum RMS Voltage VRMS noted) MAXIMUM RATINGS (Ta=25℃ unless otherwise Maximum DC Blocking Voltage Symbol VDC Parameter 20 IO BCX55 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Collector-Base Voltage VCBO Maximum Average Forward Rectified Current 14 40 BCX56RΘJA Typical Junction Capacitance (Note 1) Collector-Emitter Voltage Operating Temperature Range VCEO Storage Temperature Range VEBO CJ BCX55 TJ TSTG BCX56 CHARACTERISTICS Emitter-Base Voltage Collector Current VF PC Collector Power Dissipation IR Maximum Average Reverse Current at @T A=25℃ RθJA NOTES: T 35 42 56 70 105 140 50 60 80 100 150 200 Value 60 2012-0 Unit 1.0 30 V 100 40 120 60 -55 to +125 V 80 0.50 1 A 0.70 250 ℃/W Junction Temperature 150 ℃ -55~+150 ℃ 2012-06 120 200 28 Thermal Resistance From Junction To Ambient @T A=125℃ Tstg Resistance Storage 2- Thermal FromTemperature Junction to Ambient 115 150 40 mW j 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 10 100 30 500 Rated DC Blocking Voltage 18 80 -55 to +150 - 65 to +175 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 5 FM140-MH FM150-MH V SYMBOL FM120-MH FM130-MH IC Maximum Forward Voltage at 1.0A DC 16 60 21 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 15 50 0.85 0.9 0.5 0.92 10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCX55 THRU BCX56FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. conditions High current capability, low forwardSymbol voltage drop.T est • Parameter • High surge capability. BCX55 • Guardring for overvoltage protection. IC=100µA,IE=0 V(BR)CBO Collector-base voltage high-speed switching. • Ultrabreakdown BCX56 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 for packing code suffix V "G" • RoHS product Collector-emitter breakdown voltage (BR)CEO* Min 0.146(3.7) 0.130(3.3) Typ Max Unit 0.012(0.3) Typ. 60 V 0.071(1.8) 0.056(1.4) 100 BCX55 60 BCX56 80 IC=10mA,IB=0 V Halogen free product for packing code suffix "H" Mechanical data Emitter-base breakdown voltage IE=100µA,IC=0 V(BR)EBO • Epoxy : UL94-V0 rated flame retardant VCB=30V,IE=0 I Collector •cut-off current CBO Case : Molded plastic, SOD-123H , VEB=5V,IC=0 IEBOper MIL-STD-750 Emitter cut-off current • Terminals :Plated terminals, solderable Method 2026 hFE(1)* V 0.1 0.031(0.8) Typ. 0.1 VCE=2V, IC=5mA VCE=2V, IC=150mA • Mounting Position : Any hFE(3)* • Weight : Approximated 0.011 gram V Collector-emitter saturation voltage VCE=2V, IC=0.5A 40 25 IC=0.5A,IB=50mA fT VCE=5V,IC=10mA, f=100MHz Transition frequency Ratings at 25℃ ambient temperature unless otherwise specified. 0.5 V 1 V 130 MHz Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% CLASSIFICATION OF hFE(2) RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code µA Dimensions (millimeters) 63 in inches and250 VCE=2V,CHARACTERISTICS IC=0.5A Base -emitter voltage BE* MAXIMUM RATINGS ANDVELECTRICAL µA 0.031(0.8) Typ. • Polarity DC current gain : Indicated by cathode band hFE(2)* CE(sat)* 0.040(1.0) 0.024(0.6) 5 Maximum Recurrent Peak Reverse VoltageBCX55 VRRM 12 20 BCX55-10 30 40 Maximum RMS Voltage RANK 21 28 BCX56-10 VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current 63–250 RANGE IO IFSM BCX56 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 13 14 30 40 15 50 16 18 60 BCX55-16 80 10 100 115 150 120 200 35 42 BCX56-16 56 70 105 140 50 60 100 150 200 80 1.0 100–250 30 63–160 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCX55 THRU BCX56FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Typical Characteristics Static Characteristic Features 250 Pb Free Product Packagehoutline —— I FE 1000 C COMMON EMITTER VCE=2V better reverse leakage current and SOD-123H MIL-STD-19500 /228 Ta=100℃ 300 hFE 0.9mA optimize board space. 0.8mA power loss, high efficiency. • Low 150 0.7mA voltage drop. • High current capability, low forward • High surge capability. 0.6mA 100 for overvoltage protection. • Guardring 0.5mA • Ultra high-speed switching. 0.4mA 0.3mAjunction. epitaxial planar chip, metal silicon • Silicon 50 0.2mA of • Lead-free parts meet environmental standards DC CURRENT GAIN COLLECTOR CURRENT EMITTER thermal resistance. Ta=25℃ 200 1.0mA profile surface mounted application in order to • Low IC (mA) COMMON offers • Batch process design, excellent power dissipation 0.071(1.8) 0.056(1.4) 30 10 4 5 1 10 Halogen freeCOLLECTOR-EMITTER product for packing code suffix VOLTAGE VCE (V)"H" Mechanical data V —— I a a —— 1000 (mA) IC 0.040(1.0) 0.024(0.6) β=10 0.031(0.8) Typ. 0.031(0.8) Typ. 0.8 Dimensions in inches and (millimeters) T =25℃ a Ta=100℃ 0.6 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase 10 half wave, 60Hz, resistive of inductive load. 1 10 100 1000 For capacitive load, derate current by 20% COLLECTOR CURRENT I (mA) 0.4 1 10 IC —— 100 COLLECTOR CURRENT C IC 1000 (mA) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Cob/ Cib —— VCB/ VEB VBE VRRM 12 20 13300 30 14 40 15 50 16 60 18 80 Maximum RMS Voltage VRMS 14 21100 28 35 42ib C VDC 20 30 40 50 60 100 COLLECTOR CURRENT Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 10 Ta=25℃ RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1 0.2 0.6 0.8 BASE-EMITTER VOLTAGE CHARACTERISTICS Maximum Forward Voltage at 1.0Af DC—— T 500 (MHz) VBE 120 200 56 Ta=25 70℃ 105 140 V 80 100 150 200 V 30 ℃ -55 to +150 - 65 to +175 1 0.1 1 0.3 (V) 10 3 REVERSE BIAS VOLTAGE V 20 (V) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF IC 115 150 40 120 -55 to +125 @T A=125℃ 600 0.50 0.70 PC —— 0.5 IR fT NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. TRANSITION FREQUENCY 10 1.0 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Cob TSTG 0.4 10 f=1MHz 100 IE=0/IC=0 1.0 C IO IFSM Maximum Average Forward Rectified Current CAPACITANCE IC Ta=100℃ COLLECTOR POWER DISSIPATION PC (mW) (mA) COMMON EMITTER (pF) Maximum Recurrent VCE=2VPeak Reverse Voltage Maximum DC Blocking Voltage IC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS VBEsat 1.0 BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) Method 2026 • Polarity : Indicated by cathode band 100 Position : Any • Mounting T =100℃ • Weight : Approximated 0.011 gram T =25℃ 1000 Marking Code 100 COLLECTOR CURRENT CEsat C 1000 : UL94-V0 rated flame retardant • Epoxy β=10 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 300 0.012(0.3) Typ. 100 IB=0.1mA 0 product1 for packing code suffix "G" • RoHS 0 2 3 30 0.146(3.7) 0.130(3.3) Ta=25℃ 100 2- Thermal Resistance From Junction to Ambient COMMON EMITTER VCE=5V 0.9 0.85 Ta 0.92 m 10 500 400 300 200 100 Ta=25℃ 10 10 2012-06 2012-0 100 30 COLLECTOR CURRENT IC (mA) 0 0 25 50 75 100 125 150 WILLAS ELECTRONIC CORP T (℃ ) AMBIENT TEMPERATURE a WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BCX55 THRU BCX56FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features Outline Drawing SOT-89 • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 suffix "G" • RoHS product for packing code.181(4.60) Halogen free product for packing code suffix "H" Mechanical data .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , .061REF • Terminals :Plated terminals, solderable per MIL-STD-750 (1.55)REF Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .167(4.25) .102(2.60) .091(2.30) FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH RATINGS .154(3.91) Marking Code 12 .023(0.58) 20 V RRM .016(0.40) Maximum Recurrent Peak Reverse Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum.047(1.2) Average Forward Rectified Current IO IFSM Maximum RMS Voltage 13 30 Peak Forward Surge Current 8.3 ms single half sine-wave .031(0.8) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TSTG 40 120 -55 .197(0.52) to +125 -55 to +150 - 65 to +175 .017(0.44) .013(0.32) .014(0.35) .118TYP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH (3.0)TYP VF 0.9 0.92 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 @T A=125℃ 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) Rev.C 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.