RoHS BZX85C2V7-BZX85C75 D T ,. L Zener diode Features 1. High reliability 2. Low reverse current 3. Very sharp reverse characteristic IC Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ R T Parameter Test Conditions Power dissipation Junction temperature I=4mm TL≤25℃ O N Type C E L Storage temperature range C O Symbol Value Unit PV 1.3 W Tj 175 ℃ Tstg -65~+175 ℃ Symbol Value Unit RthJA 110 K/W Maximum Thermal Resistance Tj=25℃ E Parameter Junction ambient J E Test Conditions I=4mm ,TL=constant Electrical Characteristics Tj=25℃ W Parameter Forward voltage Test Conditions Type IF=200mA WEJ ELECTRONIC CO. Symbol VF Http:// www.wej.cn Min Typ Max Unit 1 V E-mail:[email protected] RoHS BZX85C2V7-BZX85C75 Type BZX85C 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) VZnom V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 J E IZT mA 80 80 80 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8 8 8 8 6 6 4 4 4 4 4 4 for VZT and 1) V 2.5~2.9 2.8~3.2 3.1~3.5 3.4~3.8 3.7~4.1 4.0~4.6 4.4~5.0 4.8~5.4 5.2~6.0 5.8~6.6 6.4~7.2 7.0~7.9 7.7~8.7 8.5~9.6 9.4~10.6 10.4~11.6 11.4~12.7 12.4~14.1 13.8~15.6 15.3~17.1 16.8~19.1 18.8~21.2 20.8~23.3 22.8~25.6 25.1~28.9 28~32 31~35 34~38 37~41 40~46 44~50 48~54 52~60 58~66 64~72 70~79 rzjT Ω <20 <20 <20 <20 <15 <13 <13 <10 <7 <4 <3.5 <3 <5 <5 <7 <8 <9 <10 <15 <15 <20 <24 <25 <25 <30 <30 <35 <40 <50 <50 <90 <115 <120 <125 <130 <135 Ω <400 <400 <400 <500 <500 <500 <500 <500 <400 <300 <300 <200 <200 <200 <200 <300 <350 <400 <500 <500 <500 <600 <600 <600 <750 <1000 <1000 <1000 <1000 <1000 <1500 <1500 <2000 <2000 <2000 <2000 R T C E L E rzjK at IZK IR mA 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 O at μA <150 <100 <40 <20 <10 <3 <3 <1 <1 <1 <1 <1 <1 <1 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 <0.5 VR V 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 N IC C D T ,. L TKVZ %/K -0.09~-0.06 -0.08~-0.05 -0.08~-0.05 -0.08~-0.05 -0.08~-0.05 -0.06~-0.03 -0.05~+0.02 -0.02~+0.02 -0.05~+0.05 0.03~0.06 0.03~0.07 0.03~0.07 0.03~0.08 0.03~0.09 0.03~0.1 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 O Tighter tolerances available request: BZX85B… ±2% of VZnom W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS BZX85C2V7-BZX85C75 D T ,. L RthJA – Therm. Resist. Junction/ Ambient (K/W) Ptot –Total Power Dissipation (W) Characteristics (Tj=25℃ unless otherwise specified) IC Tamb – Ambient Temperature(℃) l – Lead Length (mm) Figure2. Thermal Resistance vs. Lead Length R T C E L O rz –Differential Z-Resistance (Ω) CD –Diode Capacitance (pF) Figure1.Total Power Dissipation vs. Ambient Temperature N Vz-Z-Voltage (V) Vz-Z-Voltage (V) Zthp – Thermal Resistance for Pulse Cond. (K/W) Figure3. Diode Capacitance vs. Z-Voltage J E C O Figure4.Differential Z-Resistance vs.Z-Voltage E W tp –Pulse Length (ms) Figure5. Thermal Response WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS BZX85C2V7-BZX85C75 D T ,. L Dimensions in mm Cathode identification φ0.85 max. Cathode 26 min. 4.5 max. R T Standard Glass Case JEDEC DO 41 J E O Anode O N IC C φ2.8 max. 26 min. C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]