RoHS BAT85 D T ,. L Schottky Barrier Diode Features 1. High reliability 2. Very low forward voltage 3. Integrated protection ring against static discharge Applications Applications where a very low forward voltage is required Absolute Maximum Ratings R T C E L Tj=25℃ Parameter Continuous reverse voltage O IC C O N Test Conditions Symbol Value Unit VR 30 V Forward continuous current Tamb=25℃ IF 200 mA Peak forward current Tamb=25℃ IFM 300 mA tp 1 s, Tamb=25℃ IFSM 600 mA Tamb=65℃ Ptot 200 mW Maximum junction temperature Tj 125 ℃ Ambient operating temperature range TA -65~+125 ℃ Storage temperature range Tstg -65~+150 ℃ E Surge forward current Power dissipation J E W Maximum Thermal Resistance Tj=25℃ Parameter Junction ambient Test Conditions Symbol Value Unit on PC board 50mm×50mm×1.6mm RthJA 250 K/W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS BAT85 Dimensions in mm Cathode identification D T ,. L Type No. φ0.55 max. Cathode φ2.0 max. 26 min. 4.2 max. Standard Glass Case JEDEC DO 35 R T J E Anode BAT 85 O IC C 26 min. O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS BAT85 Ambient temperature: Ta(℃) Figure 1. Admissible power dissipation vs. ambient temperature Reverse leakage current: IR(uA) R T J E C E L E O IC N O Forward voltage: VF(V) Figure 2. Typical instantaneous forward characteristics Reverse voltage: VR(V) Reverse voltage: VR(V) Figure 3. Typical reverse characteristics C D T ,. L Junction capacitance : CP(pF) Power: Ptot(mW) Forward current: IF(mA) Characteristics (Tj=25℃ unless otherwise specified) Figure 4. Typical junction capacitance W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS BAT85 Electrical Characteristics D T ,. L Tj=25℃ Parameter Symbol Reverse breakdown voltage Test Conditions V(BR)R Leakage current VF Pulse test tp<300μs, δ<2% Capacitance Ctot Max Unit 30 - - V VR=25V - - 2 μA IF=0.1mA - - 0.24 V IF=1mA - - 0.32 V IF=10mA - IF=30mA - IF=100mA C - IF=10mA to IR=10mA IC to IR =0.1mA IR R T J E - VR=1V, f=1MHz trr Reverse recovery time Typ IR=10μA (pulsed) IR Forward voltage Min O - O - 0.4 V 0.5 - V - 0.8 V - 10 pF - 5 ns N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]