MMBD4148 SWITCHING DIODE Features Power dissipation 。 P D : 225 mW (Tamb=25 C) Pluse Drain I F : 150 mA Reverse Voltage V R : 75V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 ANODE-CATHODE 3 Unit:mm 1 ANODE 2 CATHODE Marking:5D 。 (Ta=25 C) Electro-Optical Characteristics Parameter Symbol Test Condition MIN. 75 MAX. Reverse breakdown voltage V (BR) I R =100 A Reverse Voltage leakage current IR V R =75V 2.5 I F =1mA 715 I F =10mA 855 I F =50mA 1000 I F =150mA 1250 Forward Voltage VF Diode Capacitance CD Reverse Recovery Time t rr WEJ ELECTRONIC CO. V R =0V f=1MHz I F =I R =10mA V R =5V R C =100 Http:// www.wej.cn Unit V A mV 20 pF 4 nS E-mail:[email protected] MMBD4148 Typical Characteristics I F , FORWARD CURRENT (mA) 100 。 T A =85 C 。 T A =-55 C 10 。 T A =25 C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 V F ,FORWARD VOLTAGE(VOLTS) Forward Voltage I R , REVERSE CURRENT ( A) 10 。 T A =155 C 。 T A =125 C 1.0 。 T A =85 C 0.1 。 T A =55 C 0.01 0.001 。 T A =25 C 0 10 20 30 40 50 V R ,REVERSE VOLTAGE(VOLTS) Leakage Current WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]