WINNERJOIN MMBD4148

MMBD4148
SWITCHING DIODE
Features
Power dissipation
。
P D : 225 mW (Tamb=25 C)
Pluse Drain
I F : 150 mA
Reverse Voltage
V R : 75V
Operating and storage junction temperature range
。
。
T j , T stg : -55 C to +150 C
SOT-23
3
1
2
1.
1.BASE
2.EMITTER
3.COLLECTOR
0.4
0.95
0.95
2.9
1.9
2.4
1.3
ANODE-CATHODE
3
Unit:mm
1
ANODE
2
CATHODE
Marking:5D
。
(Ta=25 C)
Electro-Optical Characteristics
Parameter
Symbol
Test Condition
MIN.
75
MAX.
Reverse breakdown voltage
V (BR)
I R =100 A
Reverse Voltage leakage current
IR
V R =75V
2.5
I F =1mA
715
I F =10mA
855
I F =50mA
1000
I F =150mA
1250
Forward Voltage
VF
Diode Capacitance
CD
Reverse Recovery Time
t rr
WEJ ELECTRONIC CO.
V R =0V f=1MHz
I F =I R =10mA
V R =5V
R C =100
Http:// www.wej.cn
Unit
V
A
mV
20
pF
4
nS
E-mail:[email protected]
MMBD4148
Typical Characteristics
I F , FORWARD CURRENT (mA)
100
。
T A =85 C
。
T A =-55 C
10
。
T A =25 C
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V F ,FORWARD VOLTAGE(VOLTS)
Forward Voltage
I R , REVERSE CURRENT ( A)
10
。
T A =155 C
。
T A =125 C
1.0
。
T A =85 C
0.1
。
T A =55 C
0.01
0.001
。
T A =25 C
0
10
20
30
40
50
V R ,REVERSE VOLTAGE(VOLTS)
Leakage Current
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]