RoHS LLDB4 D T ,. L DIAC Features 1. VBO: 40V 2. Breakover voltage range: 35 to 45V Applications IC Functioning as a trigger diode with a fixed voltage reference, the LLDB4 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. R T Absolute Maximum Ratings (Limiting values) Parameter O N C E L Repetitive peak on-state current (tp=20μs F=120 Hz) Operating junction temperature range Storage temperature range J E C O Symbol Value Unit ITRM 2 A Tj -40 ~ +125 ℃ Tstg -40 ~ +125 ℃ E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS LLDB4 Φ1.5±0.1 Dimensions in mm IC 0.3 3.5±0.2 Glass Case Mini Melf / SOD 80 JEDEC DO 213 AA J E R T O C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS LLDB4 Figure 1. Relative variation of VBO versus junction temperature (typical values) R T IC C D T ,. L O Figure 2. Repetitive peak pulse current versus pulse duration (maximum values) O N C E L Figure 3. Time duration while current pulse is higher 50 mA versus C and Rs (typical values) J E E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS LLDB4 D T ,. L Electrical Characteristics (Tj=25℃ unless otherwise specified) Parameter Symbol Breakover voltage* VBO Test Conditions C=22nF** Value MIN. 35 TYP. 40 MAX. 45 C=22nF** MAX. O Breakover voltage symmetry |VBO1-VBO2| Dynamic breakover voltage* △V VBO and VF at 10mA MIN. Output voltage* VO see diagram 2(R=20Ω) MIN. Breakover current* IBO C=22nF** MAX. MAX. Rise time* tr see diagram 3 Leakage current* IR VR=0.5VBO max IC *Applicable to both forward and reverse directions. **Connected in parallel to the device. R T J E W O C MAX. ±3 5 5 50 Unit V V V V μA 2 μs 10 μA N C E L Diagram 2. Test circuit E Diagram 1. Voltage – current characteristic curve WEJ ELECTRONIC CO. Http:// www.wej.cn Diagram 3. Rise time measurement E-mail:[email protected]