YEASHIN SF58G

DATA SHEET
SF51G~SF58 G
SEMICONDUCTOR
SUPE RFAST RECOVERY RECTIFIERS
VOLTAGE- 50 to 8 00 Volts CURRENT - 5.0 Amperes
FEATURES
• Superfast recovery times-epitaxial construction.
DO-201AD Unit:inch(mm)
• Low forward voltage, high current capability.
• Exceeds environmental standards of MIL-S-19500/228.
• Hermetically sealed.
• Low leakage.
.210 (5.3)
.188 (4.8)
DIA.
• High surge capability.
• Plastic package has Underwriters Laboratories
1.0 (25.4)
MIN.
Flammability Classification 94V-O utilizing
.375 (9.5)
.285 (7.2)
Flame Retardant Epoxy Molding Compound.
• High temperature soldering : 260°C / 10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
1.0 (25.4)
MIN.
MECHANICAL DATA
.052 (1.3)
.048 (1.2)
DIA.
• Case: Molded plastic, DO-201AD
• Terminals: Axial leads, solderable to MIL-STD-202,Method 208
• Polarity: Color Band denotes cathode end
• Mounting Position: Any
• Weight: 0.04 ounce, 1.12 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load, 60Hz.
UNITS
SF51G
SF52G
SF53G
SF54G
SF55G
SF56G
SF57G
SF58G
Maximum Recurrent Peak Reverse Voltage
50
100
150
200
300
400
600
800
V
Maximum RMS Voltage
35
70
105
140
210
320
420
640
V
Maximum DC Blocking Voltage
50
100
150
200
300
400
600
800
V
Maximum Average Forward Current .375"(9.5mm)
lead length at TA=55 °C J
Peak Forward Surge Current, IFM (surge):8.3ms single
halfsine-wave superimposed on rated load(JEDEC method)
5.0
A
150.0
A
1.25
0.95
Maximum Forward Voltage at 5.0A DC
Maximum DC Reverse Current at Rated DC Blocking Voltage
Maximum DC Reverse Current at Rated DC Blocking Voltage
TA=125 °C
Maximum Reverse Recovery Time(Note 1)
1.70
V
5.0
µA
300
µA
35.0
nS
Typical Junction capacitance (Note 2)
45
pF
Typical Junction Resistance(Note 3) RθJA
25
°C /W
-55 to +150
°C
Operating and Storage Temperature Range TJ
NOTES:
1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted
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1
REV.02 20110725
RATINGS AND CHARACTERISTIC CURVES
SF51G~SF588G
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
10Ω
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
( )
1Ω
NONINDUCTIVE
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
AVERAGE FORWARD CURRENT,(A)
50Ω
NONINDUCTIVE
(+)
OSCILLISCOPE
(NOTE 1)
-1.0A
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
1cm
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
SET TIME BASE FOR
6
5
4
Single Phase
3
Half Wave 60Hz
Resistive Or Inductive Load
2
0.375"(9.5mm) Lead Length
1
0
0
25
50
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
CHARACTERISTICS
50
10
10
REVERSE LEAKAGE CURRENT, (µA)
50
4G
G
6G
SF5
58
F5
SF
57
G-
55G
SF
~S
SF5
1G~
1.0
SF
INSTANTANEOUS FORWARD CURRENT,(A)
FIG.3-TYPICAL FORWARD
3.0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
.01
.4
.6
.8
1.0
1.2
1.4
1.6
100
125
150
175
3.0
1.0
Tj=100 C
Tj=25 C
0.1
1.8
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FORWARD VOLTAGE,(V)
FIG.6-TYPICAL JUNCTION CAPACITANCE
FIG.5-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
175
150
JUNCTION CAPACITANCE,(pF)
PEAK FORWARD SURGE CURRENT,(A)
75
AMBIENT TEMPERATURE,( C)
50 / 10ns / cm
120
90
Tj=25 C
8.3ms Single Half
Sine Wave
60
JEDEC method
30
150
125
100
75
50
25
0
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
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.01
.05
.1
.5
1
5
10
REVERSE VOLTAGE,(V)
2
REV.02 20110725
50
100