DATA SHEET UF800F~UF8010F SEMICONDUCTOR ULT RAFAST SWITCHING RECTIFIERS VOLTAGE- 50 to 1000 Volts CURRENT - 8.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. ITO-220AC • Exceeds environmental standards of .185(4.8) MAX .406(10.3)MAX .130(3.3) MAX MIL-S-19500/228 Unit:inch(mm) .134(3.4)DIA .113(3.0)DIA • Low power loss, high efficiency. .112(2.85) .100(2.55) .272(6.9) .248(6.3) • Low forwrd voltge, high current capability • High surge capacity. .606(15.4) .583(14.8) • Ultra fast recovery times, high voltage. • High temperature soldering : 260OC / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS environment .161(4.1) MAX substance directive request MECHANICAL DATA • Case: ITO-220AC full molded plastic package .114(2.9 ) .098(2.5) .055(1.4) MAX .032(0.8) MAX .035(0.9) MAX • Terminals: Lead solderable per MIL-STD-202, Method 208 .543(13.8) .512(13.0) .100(2.55) .100(2.55) • Polarity: As marked. • Standard packaging: Any • Weight: 0.08 ounces, 2.26grams. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% UF800F UF801F UF802F UF803F UF804F UF806F UF808F UF8010F UNITS Maximum Recurrent Peak Reverse V oltage 50 100 200 300 400 600 800 1000 V Maximum RMS Voltage 35 70 140 210 280 420 560 700 V Maxi mum DC Bl ocking Voltage 50 100 200 300 400 600 800 1000 Maximum Average Forward Rectif ied Current at Tc=100°C V 8.0 A 125 A Peak Forward Surge Current , 8.3 ms single half sine- wave super imposed on rated load (J EDEC method) Maximum Instantaneous Forward Vol tage 1.0 at 8.0A per element 1.30 Maxi mum DC Reverse Cur rent (Note 1) Ta=25°C 10 at Rated DC Blocking Voltage 500 Ta=125°C 1.50 1.70 µA Typical Junction Capacitance (Note 1) 80 50 Maximum Reverse Recovery Time (Note 2) 50 75 Typical Thermal Resistance Note RθJC Operating and Storage Temperature Range TJ V pF ns 15 °C/W -55 to +150 °C NOTES: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC. 2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A. 3. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted. http://www.yeashin.com 1 REV.02 20110725 RATINGAND CHARACTERISTICCURVES UF800F~UF8010F t rr +0.5A 10 Noninductive 50 Noninductive 0 (-) PULSE GENERATOR NOTE 2 (+) 25Vdc (approx) (-) 1 Non inductive -0.25 (+) OSCILLOSCCOPE NOTE 1 NOTES: 1.Rise Time=7ns max -1.0 Input Impedance=1 megohm. 22pF 1cm SET TIME BASE FOR10ns/cm 2. Rise Time=10ns max. Source Impedance = 50 Ohms AV E R A G F EO R WA R DC U R R E N T Fig.1-REVERSERECOVERY TIME CHARACTERISTIC AND TEST CIRCUITDIAGRAM 100 INSTANEOUS FORWARD CURRENT,(A) 300-400V 50-200V 10 600-800V 1 10.0 7.5 5.0 2.5 0 0 50 150 100 CASE TEMPERATURE,OC Fig.3-FORWARD CURRENTDERATING CURVE FORWARD SURGE CURRENT, AMPERES 0.1 O T=25 C J 0.01 .4 .8 .6 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE , VOLTS Fig. 2- FORWARD CHARACTERISTICS 1000 140 120 100 80 60 40 20 10 1 O TJ= 125 C 100 NUMBER O F CYCLES AT 60Hz 100 Fig.4-PEAK FORWARD SURGE CURRENT 240 10 1.0 C A PA C I TA N C E ,p F IR- REVERSE LEAKAG E CURRENT. M IC RO AM PERES 12.5 O TJ= 25 C 200 160 120 O TJ = 25 C 80 40 0.1 0 20 40 60 80 100 120 140 2 5 10 20 50 100 200 500 REVERSE VOLTAGE,V OLTS %o f PIV. VOLTS Fig.5- TYPICAL REVERSE CHARACTERISTICS http://www.yeashin.com 1 Fig.6-TYPICAL JUNCTION CAPACITANCE 2 REV.02 20110725