DATA SHEET SEMICONDUCTOR UF1000F~UF1008F ULT RAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing ITO-220AC Flame Retardant Epoxy Molding Compound .185(4.8) MAX • Exceeds environmental standards of MIL-S-19500/228 .406(10.3)MAX .130(3.3) MAX • Low power loss, high efficiency Unit:inch(mm) .134(3.4)DIA .113(3.0)DIA • Low forward voltage, high current capability .112(2.85) .100(2.55) .272(6.9) .248(6.3) • High surge capacity .606(15.4) .583(14.8) • Ultra Fast recovery times, high voltage • High temperature soldering : 260OC / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS environment .161(4.1) MAX substance directive request MECHANCALDATA • Case: ITO-220AC full molded plastic package • Terminals: Lead solderable per MIL-STD-202, Method 208 .114(2.9) .098(2.5) .055(1.4) MAX .032(0.8) MAX .035(0.9) MAX • Polarity: As marked .543(13.8) .512(13.0 ) .100(2.55) .100(2.55) • Mounting Position: Any • Weight: 0.08 ounce, 2.26 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC•ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% TYPE NUMBER UF1000F UF1001F UF1002F UF1003F UF1004F UF1006F UF1008F UNITS Maximum Recurrent Peak Reverse V oltage 50 100 200 300 400 600 800 Maximum RMS Voltage 35 70 140 210 280 420 560 V Maximum DC Blocking Voltage 50 100 200 300 400 600 800 V Maximum Average Forward Rectif ied Cur rent . 375” (9.5mm) lead length @ TC=100 °C Peak Forward Surge Current , 8.3ms single half sine wave superimposed on rated load(J ECEC method) Maximum Instantaneous Forward Voltage a t 10.0A 10 A 150 A 1.0 1.3 Maxi mum DC Reverse Current @TA=25 °C 10.0 at Rated DC Blocking Vol tage @TA=125 °C 500 1.7 50 75 Typi cal Junction capaci tance (Note 2) 80 50 Operating and Storage Temperature Range T J ,TSTG V µA Maximum Reverse Recovery Time(Note 1) Typi cal Junction Resi stance (Note 2) R JA V nS pF 15 °C/W -55 to +150 °C NOTES: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A 2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC 3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B.mounted http://www.yeashin.com 1 REV.02 20110725 RATING AND CHARACTERISTIC CURVES UF1000F~UF1008F trr +0.5A 0 -0.25 -1.0 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. 1cm SET TIME BASE FOR 50 ns/cm Source Impedance = 50 Ohms 20 1000 16 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES PEAK FORWARD CURRENT, AMPERES Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 12 8 4 0 0 50 100 150 CASE TEMPERATURE,°C TJ = 25 °C 1.0 0.1 TJ = 125 °C 8.3ms SINGLE HALF SINCEWAVE JEDEC METHOD 120 90 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE 60 Fig. 2-TYPICAL REVERSE CHARACTERISTICS 30 80 40 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz Fig. 3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 210 CAPACITANCE, (pF) 10 150 INSTANTANEOUS FORWARD CURRENT, (A) PEAK FORWARD CURRENT AMPERES Fig. 1-TYPICAL FORWARD CURRENT DERATING CURVE TJ = 125 °C 100 200 160 120 80 40 UF1000F UF1008F 2 5 20 50 100 200 UF1000F 10 3.0 500 UF1008F 1.0 0.3 0.1 0.03 0.01 0.4 0 1 20 0.6 0.8 1.0 1.2 1.4 1.8 REVERSE VOLTAGE, VOLTS FORWARD VOLTAGE, VOLTS Fig. 4-TYPICAL JUNCTION CAPACITANCE Fig. 5-TYPICAL FORWARD CHARACTERISTICS http://www.yeashin.com 2 REV.02 20110725