YEASHIN UF108G

DATA SHEET
UF100G~UF1010G
SEMICONDUCTOR
ULT RAFAST SWITCHING RECTIFIER
VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere
FE A T URES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
DO-41
Flame Retardant Epoxy Molding Compound
Unit:inch(mm)
• Void-free Plastic in DO-41 package
• 1.0 ampere operation at TA=55 OC with no thermal runaway
• Exceeds environmental standards of MIL-S-19500/228
.107 (2.7)
.080 (2.0)
DIA.
• Ultra fast switching for high efficiency
• High temperature soldering : 260 C / 10 seconds at terminals
O
1.0 (25.4)
MIN.
• Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
.205 (5.2)
.160 (4.1)
MECHANICAL DATA
• Case: Molded plastic, DO -41 GLASS PASSIVATION
• Terminals: Axial leads, solderable per MIL-STD-202,
1.0 (25.4)
MIN.
Method 208
.034 (.86)
.028 (.71)
DIA.
• Polarity: Band denotes cathode
• Mounting Position: Any
• Weight: 0.013 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
UF100G UF101G UF102G UF104G UF106G UF108G UF1010G
UNITS
Peak Rev erse Volt age, Pepetitive ; VRM
50
100
200
400
600
800
1000
Maximum RMS Voltage
35
70
140
280
420
560
700
V
DC Bl ocki ng Voltage; VR
50
100
200
400
600
800
1000
V
Average Forward Current, Io @TA=55 °C 3.8”
lead length, 60Hz, resistive or i nductive load
V
1.0
A
30.0
A
Peak Forward Surge Current IFM (surge)
8.3msec . single half sine- wave superimposed on rated load
(JEDEC method)
Maximum Forward Voltage VF @1.0A, 25 °C
1.00
1.30
Maxi mum Reverse Current, @ Rated TJ =25 °C
1.50
1.70
V
5
µA
µA
Reverse Voltage TJ =100°C
100
Typi cal Junction capacitance (Note 1) CJ
17.0
pF
Typi cal Junction Resi stance (Note 2) R JA
60.0
°C/W
Reverse Recovery Time
50
IF=.5A, IR=1A, Irr =.25A
Operati ng and Storage Temperature Range
75
-55 to +150
ns
°C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
2. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted
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1
REV.02 20110725
RATING AND CHARACTERISTIC CURVES
UF100G~UF1010G
trr
+0.5A
0
-0.25
-1.0
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
1cm
SET TIME
BASE FOR
50 ns/cm
Source Impedance = 50 Ohms
VERAGE FORWARD CURRENT, AMP
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10
UF100G
TYPICAL
IFM, Apk
1
UF108G
TJ = 25°C
0.1
0.01
0
.2
.4
.6
.8
1.0 1.2 1.4 1.6
SINGLE PHASE
HALF WAVE 60Hz
RESISSTIVE OR
INDUCTIVE
LOAD .375" LEAD
LENGTHS
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE, °C
Fig. 2-FORWARD CHARACTERISTICS
Fig. 3-FORWARD CURRENT DERATING CURVE
FORWARD SURGE CURRENT, AMPERES
FORWARD VOLTAGE-VFM(Vpk)
100
JUNCTION CAPACITANCE, pF
1.2
TJ = 25 °C
f = 1.0MHz
Vsig = 50m Vp-p
10
1
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
30
25
20
15
10
5
.1
.5
1
2
5
10
20
50
100 200
500
NUMBER OF CYCLES AT 60Hz
Fig. 4-TYPICAL JUNCTION CAPACITANCE
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35
Fig. 5-PEAK FORWARD SURGE CURRENT
2
REV.02 20110725