DATA SHEET U F1AS THRU UF1MS SEMICONDUCTOR H SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts ULTRA FAST RECTIFIERS FORWARD CURRENT - 1.0 Ampere : Halogen Free : Pb Free SOD-123S FEATURES Unit:inch(mm) 0.067(1.70) 0.055(1.40) • • For surface mounted applications 0.112(2.85) 0.100(2.55) • • Low forward voltage drop and high current capability • • Low reverse leakage current .037(0.94) TYP • • Glass passivated chip • • Ultra fast switching for high efficiency • • Plastic material has UL flammability classification 94V-0 • • High temperature soldering : 260OC / 10 seconds at terminals • • Pb free product at available : 99% Sn above meet RoHS environment 0.006(0.15) TYP substance directive request 0.047(1.20) MAX MECHANICAL DATA • • Case : Molded plastic 0.152(3.85) 0.140(3.55) • • Polarity : Indicated by cathode band • • Weight : 0 .01 grams 0.014(0.35) MIN MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25• • ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS SYMBOL MARKING CODE UF1AS UF1BS UF1DS UF1GS UF1KS UF1MS U1 U2 U3 U4 UF1JS U5 U6 U7 UNIT 100 200 400 600 800 1000 V Maximum Recurrent Peak Reverse V oltage VRRM 50 Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TL =75°C I(AV) 1.0 A IFSM 30 A Peak Forward Surge Current 8.3ms single ha lf sine- wave super imposed on rated load (JEDEC METHOD) Maxi mum f orward Voltage at 1.0A DC VF Maxi mum DC Reverse Cur rent @TJ =25 °C at Rated DC Blocking Voltage @TJ =100°C Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range 1.0 1.3 1.5 1.7 5 IR V uA 100 TRR 50 75 ns CJ 20 10 pF RθJL 30 TJ -55 to +150 °C TSTG -55 to +150 °C °C/W NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A. 2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3.Thermal Resistance junction to Lead. http://www.yeashin.com 1 REV.02 20110725 RATING AND CHARACTERISTIC CURVES UF1AS THRU UF1MS trr +0.5A 0 -0.25 -1.0 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. 1cm SET TIME BASE FOR 50 ns/cm Source Impedance = 50 Ohms Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 10 PEAK FORWARD SURGE CURRENT, AMPERES TJ = 25 O C TYPICAL IFM, Apk UF1AS 1.0 UF1GS 0.1 UF1KS 100 TJ = 25O C f = 1.0MHz Vsig = 50m Vp-p 10 1 0.1 1 10 100 .01 0 .2 .4 .6 .8 1.0 1.2 1.4 REVERSE VOLTAGE, VOLTS AVERAGE FORWARD CURRENT AMPERES 2.0 Fig. 3- TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT, AMPERES Fig. 2-FORWARD CHARACTERISTICS SINGLE PHASE HALF WAVE RESISTIVE OR INDUCTIVE P.C.B MOUNTED ON 0.315×0.315"(8.0×8.0mm) PAD AREAS 1.0 25 50 75 25 8.3ms SINGLE HALF SINE WAVE 20 JEDEC METHOD 15 10 5 1 100 125 150 175 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz LEAD TEMPERATURE, OC Fig. 4- FORWARD CURRENT DERATING CURVE http://www.yeashin.com 30 Fig. 5-PEAK FORWARD SURGE CURRENT 2 REV.02 20110725 100 U F1AS THRU UF1MS MOUNTING PAD LAYOUT S http://www.yeashin.com 3 REV.02 20110725